2N3019A-Transistor by ON Semiconductor | NPN Amplifier Transistor | TO-18 Package

2N3019A-Transistor Overview

The 2N3019A is a high-performance NPN bipolar junction transistor known for its versatility in low noise and high frequency applications. Designed primarily for general purpose amplification and switching, this transistor offers reliable operation with a maximum collector-emitter voltage of 25V and collector current up to 100mA. Its robust construction ensures consistent performance in both analog and digital circuits, making it a preferred choice among engineers for industrial and communication system designs. Backed by quality manufacturing standards, the 2N3019A provides a stable gain bandwidth product and low noise figure, enhancing signal integrity in demanding environments. For more detailed product sourcing, visit IC Manufacturer.

2N3019A-Transistor Key Features

• Low noise characteristic: Ensures minimal signal distortion, critical for high-fidelity amplification in audio and RF circuits.
• High gain bandwidth product: Provides efficient amplification at higher frequencies, supporting applications up to several MHz.
• Moderate collector current rating: Supports up to 100mA, suitable for medium power switching and amplification tasks.
• Compact TO-18 metal can package: Offers excellent thermal dissipation and durability, enhancing operational reliability in industrial settings.

2N3019A-Transistor Technical Specifications

2N3019A-Transistor Advantages vs Typical Alternatives

This transistor stands out by delivering a balanced combination of low noise and high frequency response, outperforming many generic general-purpose transistors in sensitive amplification tasks. Its robust power dissipation and stable gain make it more reliable in industrial environments where signal clarity and device longevity are critical. The TO-18 package enhances thermal performance compared to plastic encapsulated alternatives, ensuring consistent operation under extended load conditions.

Typical Applications

• Low noise audio preamplifiers: Ideal for circuits requiring minimal signal distortion and high fidelity performance over a wide frequency range.
• RF signal amplification: Suitable for intermediate frequency stages in communication receivers, offering high gain and low noise figure.
• Switching circuits: Can be used in medium current switching applications where moderate voltage and current ratings are sufficient.
• General purpose amplification: Fits a wide variety of analog amplification needs in industrial control and instrumentation.

2N3019A-Transistor Brand Info

The 2N3019A transistor is manufactured to meet stringent quality and reliability standards expected in professional electronic applications. Its consistent performance across batches makes it a trusted component for engineers designing precision analog and RF circuits. The product is available through authorized distributors and is supported by comprehensive datasheets and application notes, ensuring seamless integration into industrial and commercial designs.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is 100mA. This rating makes it suitable for medium power amplification and switching applications without risking device damage under normal operating conditions.

Can this transistor be used in high-frequency applications?

Yes, with a typical transition frequency (f_T) of approximately 100 MHz, this transistor supports high-frequency amplification tasks such as RF and intermediate frequency stages in communication devices.

What package type does the 2N3019A come in, and why is it beneficial?

This transistor is housed in a TO-18 metal can package, which offers superior thermal conductivity and mechanical durability compared to plastic packages, enhancing reliability in industrial environments.

Is the 2N3019A transistor suitable for low noise amplification?

Indeed, the device is designed for low noise operation, making it an excellent choice for audio preamplifiers and sensitive signal processing circuits where noise reduction is crucial.

What are the voltage limits to keep in mind when using this transistor?

The maximum collector-emitter voltage is 25V, collector-base voltage is 30V, and emitter-base voltage is 5V. Staying within these limits ensures safe and reliable transistor operation without risking breakdown or damage.