2N2907AE4-Transistor-RoHS PNP Bipolar Junction Transistor, TO-18 Package by ON Semiconductor

  • This transistor amplifies and switches electrical signals, enabling efficient control in circuits.
  • Its electrical characteristics support stable operation under varying load conditions, enhancing performance.
  • The available package offers a compact footprint, simplifying board layouts and saving space.
  • Ideal for low-power amplification tasks in audio or signal processing devices, improving overall device response.
  • Manufactured with RoHS compliance, it ensures environmental safety and consistent product reliability.
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2N2907AE4-Transistor-RoHS Overview

The 2N2907AE4 is a RoHS-compliant PNP bipolar junction transistor optimized for general-purpose amplification and switching applications. It offers reliable performance with a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, making it suitable for medium power circuits. Its robust design ensures stable operation under varying thermal conditions, with a maximum junction temperature of 150??C. The transistor??s complementary nature and well-defined gain characteristics facilitate easy integration into analog and digital circuit designs. Sourcing this component through IC Manufacturer ensures quality compliance and availability for industrial electronics projects.

2N2907AE4-Transistor-RoHS Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100?C300
Transition Frequency (fT) 100 MHz
Junction Temperature (TJ) 150 ??C
Package Type TO-18 Metal Can

2N2907AE4-Transistor-RoHS Key Features

  • High collector current capability: Supports up to 600mA, enabling effective switching and amplification in medium-power circuits.
  • Wide voltage ratings: With a collector-emitter voltage of 40V, it suits applications requiring moderate voltage handling.
  • Stable gain characteristics: DC current gain range of 100 to 300 ensures consistent amplification for various analog designs.
  • Fast switching performance: Transition frequency of 100MHz supports efficient operation in high-frequency circuits.
  • RoHS compliance: Environmentally friendly manufacturing aligns with industry standards for hazardous substance reduction.
  • Robust metal can package: TO-18 package enhances thermal dissipation and mechanical durability.

Typical Applications

  • General-purpose amplification in audio and signal processing circuits, benefiting from its stable gain and frequency response.
  • Switching elements in medium-power control and driver circuits where reliable current handling is essential.
  • Complementary transistor pairs for push-pull amplifier stages, improving linearity and efficiency in power amplifiers.
  • Interface and buffer stages in industrial automation equipment, requiring durable transistors with consistent performance.

2N2907AE4-Transistor-RoHS Advantages vs Typical Alternatives

This transistor offers an excellent balance of voltage and current ratings with reliable gain and switching speed, making it advantageous over lower gain or less robust alternatives. Its metal can package enhances thermal management and mechanical stability compared to plastic encapsulated devices. RoHS compliance ensures it meets modern environmental standards, important for sustainable sourcing. Overall, it delivers consistent performance suitable for a wide range of industrial and commercial applications.

2N2907AE4-Transistor-RoHS Brand Info

The 2N2907AE4 transistor is a well-established device originally

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