2N2906-Transistor by ON Semiconductor – PNP Transistor, TO-18 Metal Can Package

2N2906-Transistor Overview

The 2N2906 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, it offers robust performance for medium-power circuits. The transistor features a complementary structure to the popular 2N2222 NPN device, enabling push-pull amplifier designs and other complementary configurations. Its TO-18 metal can package ensures efficient heat dissipation and reliable operation under varying thermal conditions. Sourcing this transistor through a trusted IC Manufacturer guarantees adherence to quality standards and consistent performance in industrial electronics projects.

2N2906-Transistor Key Features

• High collector current capability: Supports up to 600mA, enabling effective handling of medium-power loads in switching and amplification circuits.
• Moderate voltage rating: The 40V maximum collector-emitter voltage allows use in a wide range of industrial and consumer electronics without breakdown risk.
• Complementary PNP design: Ideal for push-pull amplifier stages and complementary transistor pairs, enhancing circuit design flexibility.
• TO-18 metal can package: Ensures superior thermal conductivity and mechanical durability for reliable operation in demanding environments.

2N2906-Transistor Technical Specifications

2N2906-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of current handling, voltage tolerance, and gain, making it advantageous over typical alternatives in medium-power PNP transistor applications. Its complementary pairing with standard NPN devices simplifies push-pull designs, improving circuit symmetry and efficiency. The TO-18 package enhances thermal management compared to plastic encapsulated transistors, supporting reliable operation under higher thermal stress and extending device longevity in industrial settings.

Typical Applications

• Signal amplification in audio and low-frequency circuits, benefiting from its moderate gain and complementary transistor compatibility for push-pull stages.
• Switching components in power control and relay driver circuits where up to 600mA collector current is needed.
• General-purpose electronic circuits requiring reliable PNP transistor operation with moderate voltage and current ratings.
• Analog and digital circuits in industrial and consumer devices that demand consistent performance and thermal stability.

2N2906-Transistor Brand Info

The 2N2906 transistor is a well-established PNP bipolar junction transistor widely distributed by multiple semiconductor manufacturers. This product is recognized for its reliable performance in industrial electronics and hobbyist applications alike. Produced under strict manufacturing standards, the transistor maintains consistent electrical characteristics, ensuring dependable operation in switching and amplification roles. Its availability in the classic TO-18 metal can package underscores its heritage and suitability for applications requiring enhanced thermal dissipation and mechanical robustness.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 600mA, allowing the transistor to handle moderate power loads in switching and amplification circuits without damage or performance degradation.

Can this transistor be used in push-pull amplifier circuits?

Yes, the transistor is a PNP type and is commonly paired with complementary NPN transistors such as the 2N2222, making it suitable for push-pull amplifier configurations that improve efficiency and linearity.

What package type does this transistor come in?

This device is housed in a TO-18 metal can package, which offers superior heat dissipation and mechanical durability compared to plastic packages, enhancing reliability in demanding applications.

What is the typical gain range of this transistor?

The DC current gain (hFE) typically ranges from 100 to 300, providing sufficient amplification capability for general-purpose signal and power applications.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) around 100 MHz, this transistor can be used in moderate-frequency applications but may not be ideal for very high-frequency RF circuits requiring GHz-range performance.