2N2905AE3-Transistor-RoHS PNP Bipolar Junction Transistor, TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies current, enabling efficient signal control in various electronic circuits.
  • The device features a standard voltage rating, ensuring stable operation within expected electrical limits.
  • Its TO-18 package offers a compact footprint, saving board space in densely populated assemblies.
  • Ideal for switching applications, it provides reliable performance in low-power signal modulation tasks.
  • Manufactured to meet RoHS standards, it supports environmental compliance and consistent quality.
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2N2905AE3-Transistor-RoHS Overview

The 2N2905AE3 is a robust PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Its RoHS-compliant construction ensures adherence to environmental standards, making it suitable for modern industrial electronics. With a maximum collector current of 600mA and a collector-emitter voltage rating of 60V, this transistor delivers reliable performance in medium-power circuits. Its complementary structure and well-defined gain characteristics simplify circuit design, especially in audio, switching, and low-noise amplifier stages. Engineers and sourcing specialists will find this device a dependable choice for cost-effective, widely supported transistor applications. For more detailed product sourcing, visit IC Manufacturer.

2N2905AE3-Transistor-RoHS Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA (max)
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 (typical range)
Transition Frequency (fT) 100 MHz (typical)
Package Type TO-18 Metal Can
Operating Temperature Range -65??C to +200??C

2N2905AE3-Transistor-RoHS Key Features

  • High Current Handling: Supports collector current up to 600mA, enabling dependable performance in medium-power switching and amplification circuits.
  • Wide Voltage Tolerance: Rated for collector-emitter voltage up to 60V, allowing operation in diverse circuit environments with varying voltage requirements.
  • RoHS Compliance: Manufactured to meet environmental regulations, ensuring reduced hazardous substances and suitability for green electronics applications.
  • High Gain Stability: Provides a consistent DC current gain (hFE) between 100 and 300, facilitating predictable amplifier behavior and ease of circuit design.
  • Durable TO-18 Package: The metal can package offers superior heat dissipation and mechanical protection, supporting reliable long-term operation.
  • Wide Temperature Range: Operates effectively from -65??C to +200??C, making it suitable for industrial and harsh environment applications.

Typical Applications

  • General-purpose amplification in audio preamplifiers and signal conditioning circuits where stable gain and medium current handling are required.
  • Switching applications in relay drivers and low-to-medium power control circuits within industrial automation systems.
  • Complementary transistor pairs in push-pull amplifier stages, enabling efficient linear amplification.
  • Use in temperature and voltage regulators, leveraging its stable characteristics over wide temperature ranges for reliable performance.

2N2905AE3-Transistor-RoHS Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance, current capacity, and gain stability that outperforms many generic PNP transistors. Its RoHS compliance and durable TO-18 metal can package improve reliability and environmental safety. Compared to standard plastic-encapsulated alternatives, it provides superior thermal management and long-term durability. These factors make it a preferred choice for engineers seeking consistent performance in demanding industrial and general-purpose electronic circuits.

2N2905AE3-Transistor-RoHS Brand Info

The 2N2905AE3 is a standardized transistor widely produced by multiple semiconductor manufacturers adhering to JEDEC specifications. This

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