2N2605UB/TR ON Semiconductor NPN Transistor – TO-92 Package, High Gain Amplifier

2N2605UB/TR Overview

The 2N2605UB/TR is a high-performance bipolar junction transistor designed for reliable switching and amplification in industrial and electronic applications. Featuring robust electrical characteristics and a sturdy TO-18 metal can package, it ensures consistent operation in demanding environments. With its well-defined gain and voltage ratings, this transistor offers engineers a dependable solution for signal processing, power regulation, and general-purpose amplification tasks. Sourced directly from IC Manufacturer, it meets stringent quality standards to support long-term system stability and efficiency.

2N2605UB/TR Key Features

• High current gain (hFE): Provides efficient amplification, improving circuit sensitivity and reducing power loss.
• Durable TO-18 metal can package: Enhances thermal performance and mechanical robustness for industrial reliability.
• Collector-emitter voltage (Vceo) rating: Supports up to 50 V, allowing operation in medium-voltage applications without breakdown risk.
• Low collector saturation voltage: Minimizes power dissipation during switching, increasing overall circuit efficiency.

2N2605UB/TR Technical Specifications

2N2605UB/TR Advantages vs Typical Alternatives

This transistor offers superior gain and voltage handling compared to many general-purpose BJTs, enabling enhanced signal amplification and switching accuracy. Its low saturation voltage reduces power loss, improving circuit efficiency. The rugged TO-18 package ensures thermal stability and mechanical durability, making it a reliable choice in industrial and precision electronics where typical plastic-encapsulated transistors may fall short.

Typical Applications

• Signal amplification in analog circuits, providing stable gain for sensor interfaces and audio preamplifiers.
• Switching applications requiring reliable operation at moderate voltages and currents.
• Industrial control systems where robust transistor performance supports automation and monitoring functions.
• General-purpose amplification tasks in electronic instrumentation and test equipment.

2N2605UB/TR Brand Info

The 2N2605UB/TR is part of a trusted product line from a leading semiconductor manufacturer known for quality and consistency. This transistor is engineered to meet industrial standards with rigorous testing and traceability. Its brand reputation ensures dependable sourcing for engineers and procurement specialists requiring proven components for critical electronic designs.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current is 0.5 A, making it suitable for moderate power applications without risk of damage under normal operating conditions.

Which package type is used for the 2N2605UB/TR?

This device is housed in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical strength compared to plastic packages.

Can this transistor be used for high-frequency amplification?

Yes, with a transition frequency (fT) of approximately 100 MHz, it is capable of handling moderate high-frequency amplification demands in analog and RF circuits.

What voltage ratings should be considered when designing circuits with this transistor?

The collector-emitter voltage rating is 50 V and the collector-base voltage rating is 60 V. Circuit designs should ensure these limits are not exceeded to avoid device failure.

How does the gain of this transistor impact circuit design?

The DC current gain (hFE) ranges from 50 to 300, allowing designers flexibility in achieving the desired amplification level while maintaining linearity and minimizing distortion.