2N2484UB-Transistor by ON Semiconductor | NPN Transistor | TO-18 Metal Can Package

2N2484UB-Transistor Overview

The 2N2484UB transistor is a high-performance bipolar junction transistor (BJT) designed for medium-power amplification and switching applications. Featuring robust electrical characteristics and reliable operation, this device supports a collector current up to 1.5A and a collector-emitter voltage rating suitable for a wide range of industrial electronics. Its complementary high gain and low saturation voltage make it ideal for amplification stages in analog circuits. Engineered with a TO-18 metal can package, it ensures enhanced heat dissipation and mechanical stability. For precision and durability in demanding environments, the 2N2484UB transistor is a dependable choice available through IC Manufacturer.

2N2484UB-Transistor Key Features

• High Collector Current Capacity: Supports up to 1.5A, enabling efficient handling of moderate power loads in switching and amplification.
• Collector-Emitter Voltage Rating: Provides a voltage tolerance up to 30V, suitable for various industrial control and signal processing circuits.
• Low Saturation Voltage: Ensures minimal voltage drop during conduction, improving overall circuit efficiency and reducing heat generation.
• High Current Gain (hFE): Offers a current gain typically ranging from 40 to 300, enhancing signal amplification performance.
• Robust TO-18 Package: Metal can packaging supports superior thermal dissipation and mechanical durability for harsh operating conditions.
• Frequency Response: Capable of operating at transition frequencies around 40MHz, supporting moderate-frequency applications.
• Reliable Switching Characteristics: Suitable for both linear amplification and switching tasks in industrial and communication equipment.

2N2484UB-Transistor Technical Specifications

2N2484UB-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced mix of high current capability and voltage tolerance compared to typical small-signal BJTs. Its low saturation voltage enhances energy efficiency in switching operations, while the TO-18 package provides superior thermal management and reliability. These features contribute to longer service life and stable performance in industrial amplifiers and control systems, making it a preferred option when precision and durability are critical.

Typical Applications

• Medium-power amplification circuits, where stable gain and efficient heat dissipation ensure reliable signal processing in industrial equipment.
• Switching regulators and power control modules requiring robust current handling and low saturation losses.
• Signal amplification stages in communication devices operating at moderate frequencies.
• Driver circuits for relays and other electromechanical components demanding reliable high-current switching.

2N2484UB-Transistor Brand Info

The 2N2484UB transistor is a specialized product offered by established semiconductor manufacturers, known for their stringent quality control and consistency in component performance. Packaged in a TO-18 metal can, it reflects a legacy of durability and reliability commonly required in industrial and military-grade electronics. This transistor is part of a broader family of BJTs designed to meet diverse system demands, backed by comprehensive datasheets and customer support services from IC Manufacturer.

FAQ

What is the maximum current the 2N2484UB transistor can handle?

The maximum collector current for this device is 1.5 amperes, which allows it to handle moderate power loads efficiently in both amplification and switching applications.

What type of package does this transistor use?

It is housed in a TO-18 metal can package, which offers enhanced heat dissipation and mechanical robustness compared to plastic encapsulated transistors.

Can this transistor be used for high-frequency applications?

Yes, it supports a transition frequency of approximately 40 MHz, making it suitable for moderate-frequency analog and switching circuits.

What voltage ratings are specified for this transistor?

The device has a collector-emitter voltage rating of 30V, collector-base voltage of 40V, and emitter-base voltage of 5V, enabling operation within these electrical limits.

Is this transistor suitable for industrial environments?

Yes, with an operating junction temperature range from ?C65??C to +200??C and a durable metal package, it is designed to function reliably under harsh industrial conditions.