2N2432A-Transistor Overview
The 2N2432A is a silicon NPN bipolar junction transistor designed primarily for low to medium power amplification and switching applications. It features a maximum collector current of 0.6A and can handle collector-emitter voltages up to 30V, making it suitable for a range of industrial and electronic circuits requiring moderate power levels. The device offers good frequency response and gain characteristics, supporting reliable performance in analog and digital signal processing. Its robust construction ensures stable operation across a wide temperature range. For detailed sourcing and technical support, visit IC Manufacturer.
2N2432A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vce) | 30 V (maximum) |
| Collector-Base Voltage (Vcb) | 40 V (maximum) |
| Emitter-Base Voltage (Veb) | 5 V (maximum) |
| Collector Current (Ic) | 0.6 A (maximum continuous) |
| Power Dissipation (Pc) | 1 W (maximum) |
| Current Gain (hFE) | 40 to 300 (depending on collector current) |
| Transition Frequency (fT) | 50 MHz (typical) |
| Package Type | TO-18 Metal Can |
2N2432A-Transistor Key Features
- High current gain: Provides efficient amplification with hFE ranging from 40 to 300, enabling precise control in signal processing applications.
- Moderate power handling: Supports collector currents up to 0.6A and power dissipation of 1W, suitable for medium power amplification and switching tasks.
- Wide voltage ratings: Collector-emitter voltage up to 30V and collector-base voltage up to 40V allow operation in diverse industrial circuits with moderate voltage requirements.
- Reliable frequency response: Transition frequency of 50 MHz ensures adequate performance in audio, low RF, and switching applications.
- Durable TO-18 metal can package: Provides thermal stability and robust protection for reliable operation in various environments.
Typical Applications
- Low to medium power amplifier stages in analog circuits, including audio and instrumentation amplifiers requiring stable gain and moderate power capacity.
- Switching applications in control circuits where moderate voltage and current switching is required, such as relay drivers or signal modulators.
- Signal processing stages in communication equipment, leveraging its frequency response and gain characteristics for effective amplification.
- General-purpose discrete transistor circuits in industrial electronics, offering reliable operation in sensor interfacing and control modules.
2N2432A-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage and current ratings with high gain, outperforming many general-purpose transistors in its class. Its metal can TO-18 package enhances thermal dissipation and mechanical durability compared to plastic packages. The 50 MHz transition frequency ensures more efficient switching and amplification in low RF ranges, making it advantageous for precision industrial applications where reliability and performance must be maintained under varying conditions.
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2N2432A-Transistor Brand Info
The 2N2432A is a classic transistor type originally popularized by manufacturers such as General Electric and Texas Instruments, with various semiconductor suppliers continuing production under similar specifications. This device is recognized for its robust construction and consistent performance, widely adopted in industrial and instrumentation applications. Many contemporary semiconductor manufacturers offer equivalent or compatible versions of this transistor, adhering strictly to the original JEDEC standard outlines.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for the device is 0.6 amperes, which allows it to handle moderate power applications safely without exceeding thermal limits.
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Can this transistor be used for high-frequency applications?
With a typical transition







