2N2369AUB-Transistor by ON Semiconductor | NPN Amplifier Transistor | TO-18 Package

2N2369AUB-Transistor Overview

The 2N2369AUB is a high-speed NPN bipolar junction transistor designed for switching and amplification applications. It offers a transition frequency of up to 100 MHz, enabling fast switching performance in RF and low-power circuits. This transistor supports a maximum collector current of 500 mA and a collector-emitter voltage of 30 V, ensuring robust operation in various industrial and communication systems. Its small-signal characteristics make it ideal for high-frequency amplifier stages and general-purpose switching tasks. Sourced from a trusted IC Manufacturer, this device balances performance, reliability, and ease of integration for demanding electronic designs.

2N2369AUB-Transistor Key Features

• High transition frequency (100 MHz): Enables rapid switching and efficient amplification in RF and high-speed circuits.
• Collector current up to 500 mA: Supports medium power loads, ensuring versatility in switching applications.
• Collector-emitter voltage rating of 30 V: Provides safe operation across a wide range of voltage conditions.
• Low saturation voltage: Minimizes power dissipation and improves overall circuit efficiency.

2N2369AUB-Transistor Technical Specifications

2N2369AUB-Transistor Advantages vs Typical Alternatives

This transistor excels in high-frequency performance with a 100 MHz transition frequency, outperforming many general-purpose transistors. Its ability to handle 500 mA collector current and a 30 V voltage rating ensures reliable operation across diverse industrial and communication circuits. Compared to typical low-speed transistors, it delivers faster switching and lower saturation voltage, enhancing energy efficiency and circuit responsiveness without compromising durability.

Typical Applications

• High-frequency amplifier stages in RF communication equipment, benefiting from its fast switching and low noise characteristics.
• General-purpose switching in control circuits where rapid transistor switching is critical.
• Driver stages in audio and signal processing circuits requiring moderate power handling.
• Industrial instrumentation circuits demanding reliable small-signal amplification under varying environmental conditions.

2N2369AUB-Transistor Brand Info

This transistor is offered by a reputable manufacturer known for delivering reliable semiconductor components tailored for industrial and communication electronics. The 2N2369AUB series is recognized for its consistent high-frequency performance, durability, and ease of integration in demanding electronic assemblies. Its metal-can TO-18 package provides excellent thermal dissipation and mechanical stability, reflecting the brand??s commitment to quality and longevity in harsh environments.

FAQ

What type of transistor is the 2N2369AUB?

The device is an NPN bipolar junction transistor (BJT) designed primarily for high-speed switching and low-power amplification tasks, suitable for RF and general-purpose applications.

What is the maximum collector current rating?

The transistor supports a maximum continuous collector current of 500 mA, making it suitable for moderate current switching and amplification in various electronic circuits.

What frequency range can this transistor operate at effectively?

With a transition frequency of 100 MHz, the transistor performs effectively in high-frequency circuits, including RF amplifiers and fast switching applications.

Which package type does the 2N2369AUB come in?

This transistor is housed in a TO-18 metal can package, offering enhanced thermal performance and reliable mechanical protection for industrial uses.

What is the typical operating temperature range for this transistor?

The device can operate reliably in temperatures ranging from -65??C to +200??C, making it suitable for harsh and varied industrial environments.