2N2369AUA-Transistor Overview
The 2N2369AUA is a high-speed NPN bipolar junction transistor designed for low-power switching and amplification applications. With a transition frequency (fT) of 250 MHz and a low collector-emitter saturation voltage, it delivers fast switching performance and efficient signal amplification. Its compact SOT-23 surface-mount package supports high-density PCB designs, making it ideal for industrial electronics and communication equipment. The transistor??s reliable gain characteristics and robust maximum ratings ensure dependable operation across various environments. For sourcing and technical details, visit IC Manufacturer.
2N2369AUA-Transistor Key Features
- High Transition Frequency: 250 MHz fT enables fast switching and high-frequency amplification, optimizing performance in RF and signal processing circuits.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, enhancing efficiency in battery-powered and low-voltage systems.
- Surface-Mount SOT-23 Package: Supports compact, automated PCB assembly for modern industrial electronics and communication devices.
- Robust Maximum Ratings: Collector current up to 0.8 A and voltage tolerance of 30 V ensure reliable operation under demanding electrical conditions.
2N2369AUA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Collector-Base Voltage (VCBO) | 40 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 0.8 | A |
| Transition Frequency (fT) | 250 | MHz |
| Power Dissipation (Ptot) | 350 | mW |
| Current Gain (hFE) | 70?C300 | (Typical Range) |
| Package Type | SOT-23 | ?C |
2N2369AUA-Transistor Advantages vs Typical Alternatives
This transistor offers superior switching speed and lower saturation voltage compared to many general-purpose transistors, improving circuit efficiency and response time. The surface-mount SOT-23 form factor supports miniaturized PCB layouts and automated assembly, enhancing manufacturing scalability. Its robust current and voltage ratings provide reliable operation under diverse industrial conditions, making it an excellent choice for engineers seeking a balance of performance and integration in compact semiconductor devices.
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Typical Applications
- High-frequency switching circuits in communication systems, where fast response and low power loss are critical to maintain signal integrity.
- Signal amplification in low-power analog circuits requiring linear gain and minimal distortion.
- Driver stages in relay and LED switching applications benefiting from low saturation voltage and rapid switching capabilities.
- General-purpose transistor use in industrial control and sensor interface electronics demanding robust operation and compact packaging.
2N2369AUA-Transistor Brand Info
The 2N2369AUA transistor is produced by a leading semiconductor manufacturer specializing in discrete components optimized for industrial and communications markets. This product continues the legacy of the 2N2369 family, delivering enhanced frequency response and surface-mount packaging to meet modern electronics design requirements. Engineered for reliability and ease of integration, it supports a wide range of applications from signal processing to power-efficient switching.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current is rated at 0.8 A, allowing it to handle moderate power loads in switching and amplification circuits without risk of damage.
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Can this transistor be used in high-frequency applications?
Yes, with a transition frequency of 250 MHz, it supports high-frequency operation suitable for RF circuits, oscillators, and fast switching applications.
What package type does this transistor come in, and why is it beneficial?
It is housed in a SOT-23 surface-mount package, which provides a compact footprint ideal for automated PCB assembly and high-density circuit designs.
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What are the voltage limits for safe operation?
The transistor can withstand up to 30 V between collector and emitter, 40 V between collector and base, and 5 V between emitter and base, ensuring safe operation within these limits.
How does the low saturation voltage benefit circuit performance?
Lower collector-emitter saturation voltage reduces power dissipation during switching, improving efficiency and extending battery life in portable and low-voltage devices.
