2N2222AP-Transistor-PIND NPN Bipolar Junction Transistor in TO-18 Metal Can Package

2N2222AP-Transistor-PIND Overview

The 2N2222AP-Transistor-PIND is a robust NPN bipolar junction transistor widely used in industrial and electronic applications for switching and amplification. Known for its reliable performance, this transistor supports moderate current handling and voltage ratings, making it suitable for general-purpose signal amplification and low-power switching tasks. Its compact PIND (Plastic Inline Dual) package ensures easy integration on printed circuit boards (PCB) while maintaining thermal stability. Engineers and sourcing specialists value this transistor for its consistent gain characteristics and compatibility with a wide range of electronic circuits. For detailed technical data and sourcing options, visit IC Manufacturer.

2N2222AP-Transistor-PIND Technical Specifications

2N2222AP-Transistor-PIND Key Features

• High gain capability: Enables efficient amplification of low-level signals, crucial for accurate signal processing in diverse circuits.
• Moderate voltage and current ratings: Supports up to 40 V and 800 mA, providing reliable switching performance in medium-power applications.
• Compact PIND package: Facilitates easy PCB mounting and thermal management, enhancing overall circuit reliability and integration.
• Fast transition frequency: At 300 MHz, it handles high-speed switching and amplification tasks, improving circuit responsiveness.

Typical Applications

• Switching circuits in industrial control systems where reliable on/off operation at moderate currents is required, supporting automation and sensor interfacing.
• Signal amplification in audio equipment, enabling clear and consistent gain for low-level audio signals.
• Driver stages in relay and lamp control circuits, providing sufficient current to operate external loads efficiently.
• General-purpose electronic circuits, including oscillators and timers, where predictable transistor performance is essential for stable operation.

2N2222AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage, current, and gain specifications, making it advantageous over other general-purpose BJTs with lower gain or current limits. Its PIND package ensures better thermal dissipation compared to standard plastic encapsulations, enhancing reliability. Additionally, its high transition frequency supports faster switching applications, which typical alternatives may not sustain, making it well-suited for both analog and digital industrial circuits.

2N2222AP-Transistor-PIND Brand Info

The 2N2222AP is a classic transistor model widely manufactured by multiple semiconductor companies, including ON Semiconductor, Fairchild Semiconductor (now part of ON Semiconductor), and NXP Semiconductors. The ??AP?? suffix typically indicates a plastic package variant designed for inline mounting. This transistor is recognized globally for its versatility and reliability in various industrial and consumer electronics. As a standard component, it benefits from robust supply chains and comprehensive datasheet support from established brands, ensuring consistent quality and availability.

FAQ

What are the maximum voltage ratings for the 2N2222AP transistor?

The maximum collector-emitter voltage is 40 V, collector-base voltage is 75 V, and emitter-base voltage is 6 V. These ratings define the safe operating limits