2N2060-Dual-Transistor by ON Semiconductor – High-Power Amplifier, TO-66 Package

  • This dual transistor device enables efficient signal amplification for improved circuit performance and stability.
  • Its voltage rating supports reliable operation under typical power supply conditions, ensuring consistent functionality.
  • The compact package design helps save board space, facilitating easier integration into dense electronic layouts.
  • Ideal for audio amplification circuits, it enhances sound clarity by providing stable gain and low distortion.
  • Manufactured to meet standard quality controls, it offers dependable performance over extended usage periods.
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2N2060-Dual-Transistor Overview

The 2N2060-Dual-Transistor is a high-performance semiconductor device designed for reliable amplification and switching in a variety of industrial and electronic applications. Featuring two matched transistors in a single package, it offers precise electrical characteristics ideal for differential amplifier circuits, signal processing, and analog switching. This dual-transistor configuration enhances circuit integration, reduces component count, and ensures consistent performance under varying load conditions. Engineered for robust operation, it supports moderate power dissipation and voltage ratings suited for industrial-grade designs. For sourcing and detailed specifications, visit IC Manufacturer.

2N2060-Dual-Transistor Key Features

  • Matched Pair Configuration: Provides closely matched transistor characteristics, ensuring improved gain accuracy and reduced offset in amplifier circuits.
  • High Current Gain (hFE): Enables efficient signal amplification, minimizing the need for additional gain stages in complex designs.
  • Complementary Switching Capability: Supports fast switching speeds, critical for high-frequency analog and digital applications.
  • Thermal Stability: Designed to maintain performance over a wide temperature range, enhancing device reliability in industrial environments.

2N2060-Dual-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Dual Transistor
Collector-Emitter Voltage (VCEO)30 V
Collector Current (IC)1.5 A
Power Dissipation (Ptot)30 W
DC Current Gain (hFE)40 to 160 (typical)
Transition Frequency (fT)100 MHz (typical)
Package TypeTO-39 Metal Can
Operating Junction Temperature-65??C to +150??C

2N2060-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers superior gain matching and thermal stability compared to discrete single transistors, improving circuit accuracy and reducing design complexity. Its moderate power handling and voltage ratings make it more reliable for industrial switching and amplification tasks, while integration into a single package simplifies PCB layout and enhances signal integrity. These advantages increase efficiency and overall system robustness in demanding electronics applications.

Typical Applications

  • Differential amplifier circuits requiring matched transistor pairs for precise signal processing in instrumentation and measurement systems.
  • Analog switching applications, where fast response and reliable transistor pairs improve performance in audio and communication equipment.
  • General-purpose amplification tasks in industrial control systems needing stable gain and thermal resilience under varying load conditions.
  • Complementary transistor configurations in power regulation circuits, enhancing switching efficiency and reducing component count.

2N2060-Dual-Transistor Brand Info

The 2N2060-Dual-Transistor is a trusted product from established semiconductor manufacturers, known for delivering consistent quality and performance in industrial electronics. This device is manufactured to meet rigorous industry standards, offering engineers and sourcing specialists a dependable component for a wide range of applications. Its packaging and electrical characteristics align with legacy and modern circuit designs, ensuring compatibility and ease of integration.

FAQ

What are the main electrical ratings of the 2N2060-Dual-Transistor?

The device supports a collector-emitter voltage of up to 30 V and a collector current of 1.5 A. It can dissipate power up to 30 W, making it suitable for moderate power amplification and switching applications.

How does the matched pair configuration benefit circuit design?

The matched transistor pair ensures closely aligned gain and electrical characteristics, reducing offset voltage and distortion in differential amplifiers. This improves signal accuracy and stability, which is critical in precision analog circuits.

Can this transistor be used in high-frequency applications?

Yes, with a typical transition frequency of 100 MHz, the device is capable of handling moderate high-frequency signals, making it applicable for RF and fast switching analog circuits.

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What package does the 2N2060-Dual-Transistor come in, and what are the thermal considerations?

The device is housed in a TO-39 metal can package, which offers good thermal conductivity. It operates reliably in a temperature range from -65??C to +150??C, suitable for harsh industrial environments.

Is the 2N2060 suitable for general-purpose amplification and switching?

Absolutely. Its combination of current gain, voltage tolerance, and matched transistor pairing makes it versatile for both amplification and switching tasks in industrial and consumer electronics.

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