1N5309UR-1 Overview
The 1N5309UR-1 is a high-voltage silicon rectifier diode designed to provide reliable rectification in demanding industrial and power electronic applications. Featuring a robust construction and a high peak repetitive reverse voltage rating, this diode excels in converting alternating current (AC) to direct current (DC) with minimal loss. Its fast recovery characteristics contribute to efficient switching performance, making it suitable for use in power supplies, inverters, and rectifier circuits. Engineers and sourcing specialists seeking a durable, high-performance diode will find this component meets stringent standards for voltage ratings and surge capabilities. For more detailed product data and sourcing options, visit the IC Manufacturer website.
1N5309UR-1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (V_RRM) | 600 | Volts |
| Average Forward Current (I_F(AV)) | 3 | Amperes |
| Non-Repetitive Peak Forward Surge Current (I_FSM) | 100 | Amperes |
| Forward Voltage Drop (V_F) at 3A | 1.3 | Volts |
| Reverse Recovery Time (t_rr) | 2 | Microseconds |
| Operating and Storage Temperature Range (T_j, T_stg) | -65 to +150 | ??C |
| Junction Capacitance (C_j) | 25 | pF |
| Package Type | DO-201AD | ?? |
1N5309UR-1 Key Features
- High Peak Repetitive Reverse Voltage: Supports up to 600 V, enabling use in high-voltage rectification circuits and enhancing circuit protection.
- Robust Forward Current Handling: Rated for an average forward current of 3 A, allowing steady operation in moderate power applications.
- Fast Reverse Recovery Time: With a typical recovery time of 2 microseconds, it minimizes switching losses and reduces electromagnetic interference in high-frequency environments.
- Surge Current Capability: Can withstand non-repetitive peak surge currents up to 100 A, ensuring reliability during transient load conditions.
- Wide Operating Temperature Range: Reliable performance between -65??C and +150??C suits harsh industrial environments and temperature variations.
- Low Forward Voltage Drop: Typical 1.3 V at rated current reduces power dissipation and improves overall system efficiency.
- Industry-Standard DO-201AD Package: Facilitates easy integration and replacement in existing designs with proven mechanical robustness.
1N5309UR-1 Advantages vs Typical Alternatives
This diode offers superior voltage and surge current ratings compared to many standard rectifiers, providing enhanced reliability in industrial power applications. Its fast recovery time reduces switching losses and electromagnetic noise, which is critical in high-frequency power conversion. Additionally, the wide temperature range and low forward voltage drop contribute to improved efficiency and longevity in harsh operating conditions, making it a preferred choice over typical silicon rectifiers.
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Typical Applications
- Power supply rectification: Used in controlled rectifier circuits for converting AC to DC efficiently, benefiting industrial equipment and consumer electronics requiring stable DC power.
- Inverter circuits: Suitable for use in inverter designs due to its fast recovery characteristics and high voltage rating, ensuring reliable switching and minimal power loss.
- Battery charging systems: Supports steady current flow and high surge capacity, making it ideal for regulated battery charging applications.
- Motor control circuits: Provides reliable diode functionality in motor drives and control circuits under varying load and temperature conditions.
1N5309UR-1 Brand Info
This product is manufactured by a leading semiconductor company specializing in discrete components for industrial and commercial applications. The 1N5309UR-1 is part of a well-established line of silicon rectifier diodes known for high reliability, durability, and consistent electrical performance. Its design adheres to stringent quality standards, ensuring dependable operation in critical power conversion and protection roles. The manufacturer supports comprehensive datasheets and technical resources to assist engineers in seamless integration and optimal application.
FAQ
What is the maximum repetitive reverse voltage rating for this diode?
The diode is rated for a peak repetitive reverse voltage of 600 volts, allowing it to block high voltages without breakdown, which is essential for reliable rectification in high-voltage environments.
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Can this diode handle surge currents during transient events?
Yes, it can withstand non-repetitive peak forward surge currents up to 100 amperes. This capability ensures that the diode remains operational during sudden transient surges, enhancing circuit protection and durability.
What is the significance of the diode??s reverse recovery time?
The reverse recovery time of approximately 2 microseconds indicates how quickly the diode switches from conducting to blocking state. A fast recovery time reduces switching losses and electromagnetic interference, which is critical in high-frequency power conversion applications.
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Is the diode suitable for operation in extreme temperature conditions?
Yes, it is specified to operate reliably within a temperature range from -65??C to +150??C. This wide range makes it suitable for harsh industrial environments where temperature fluctuations are common.
What package type does this diode come in, and why is it important?
The diode is housed in a DO-201AD package, a standard mechanical form factor that facilitates easy mounting and integration in existing designs. This package provides mechanical robustness and efficient heat dissipation, contributing to long-term reliability.
