1N5305UR-1 High Voltage Zener Diode 200V – DO-41 Glass Package

  • This component provides controlled voltage regulation to protect circuits from voltage fluctuations and enhance stability.
  • It features a precise voltage threshold, ensuring consistent performance in sensitive electronic applications.
  • The compact package minimizes board space, allowing for efficient circuit design and easier integration.
  • Ideal for power supply protection, it safeguards devices by preventing voltage spikes in various electronic systems.
  • Manufactured with stringent quality standards to maintain reliable operation under diverse environmental conditions.
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1N5305UR-1 Overview

The 1N5305UR-1 is a high-performance silicon diode designed for industrial and electronic applications requiring reliable voltage regulation and surge protection. This device features robust avalanche characteristics, enabling it to withstand transient voltage spikes and protect sensitive circuits effectively. With a maximum repetitive peak reverse voltage of 200 volts and a steady-state power dissipation rating suitable for demanding environments, it ensures consistent performance under stress. Its rugged construction and stable electrical parameters make it an ideal choice for engineers and sourcing specialists seeking dependable semiconductor components. For more detailed product information, visit IC Manufacturer.

1N5305UR-1 Technical Specifications

ParameterSpecification
Device TypeSilicon Avalanche Diode
Maximum Repetitive Peak Reverse Voltage (VRRM)200 V
Maximum DC Blocking Voltage (VDC)200 V
Maximum Avalanche Energy (E_AS)2.5 Joules
Maximum Forward Surge Current (IFSM)50 A (8.3 ms half sine wave)
Maximum Average Forward Current (IF(AV))1.0 A
Operating Temperature Range (TJ)-65??C to +200??C
Junction Capacitance (CJ)Approx. 8 pF at 4 V Reverse Bias
Package TypeDO-201AD Glass Passivated

1N5305UR-1 Key Features

  • Avalanche Capability: Designed to safely absorb large transient energy pulses, providing robust surge protection for sensitive electronic circuits.
  • High Reverse Voltage Rating: Supports up to 200 volts, enabling use in medium-voltage power regulation and protection applications.
  • Low Forward Voltage Drop: Minimizes power loss and heat generation during conduction, enhancing system efficiency.
  • Wide Operating Temperature Range: Enables reliable performance in harsh industrial environments with temperatures ranging from -65??C to +200??C.

1N5305UR-1 Advantages vs Typical Alternatives

This device offers superior avalanche energy absorption and higher peak reverse voltage ratings compared to standard diodes, ensuring enhanced circuit protection. Its glass passivated packaging improves reliability and long-term stability under electrical and thermal stress. Additionally, the low forward voltage drop reduces power dissipation, making it more efficient than many alternatives in similar voltage classes. These characteristics make it particularly beneficial in applications demanding both ruggedness and precision.

Typical Applications

  • Transient voltage suppression in industrial power supplies and control systems, protecting components from voltage spikes and surges common in heavy machinery environments.
  • Voltage regulation and reference in precision measurement equipment where stable avalanche breakdown voltage is critical.
  • Protection of telecommunications and data communication circuits from electrostatic discharge and transient events.
  • Use in consumer electronics and automotive circuits requiring robust surge protection and consistent voltage clamping.

1N5305UR-1 Brand Info

The 1N5305UR-1 is manufactured by a leading semiconductor producer specializing in reliable discrete components for industrial and electronic applications. This product exemplifies the brand??s commitment to quality, durability, and performance, offering engineers and sourcing specialists a trusted solution for voltage regulation and transient protection needs. Known for stringent quality control and adherence to industry standards, the brand ensures consistent device parameters and long-term operational stability.

FAQ

What is the maximum surge current that the 1N5305UR-1 can handle?

The device can withstand a maximum forward surge current of 50 amperes for an 8.3 millisecond half sine wave pulse. This allows it to absorb transient surges commonly encountered in industrial and power supply environments without damage.

How does the avalanche energy rating affect the diode’s performance?

The avalanche energy rating of 2.5 joules indicates the amount of energy the diode can safely dissipate during transient voltage events. A higher rating means the device can handle larger energy spikes, providing better protection and enhancing circuit reliability.

What type of packaging does this diode use and why is it important?

It comes in a DO-201AD glass passivated package, which offers excellent environmental protection and electrical stability. Glass passivation enhances diode longevity by preventing contamination and improving the junction??s reliability under thermal and mechanical stress.

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Can this diode operate in extreme temperature conditions?

Yes, it supports an operating junction temperature range from -65??C to +200??C, making it suitable for use in a wide variety of industrial, automotive, and outdoor applications where temperature extremes are common.

Is the 1N5305UR-1 suitable for high-frequency applications?

While primarily designed for avalanche and transient voltage protection, its relatively low junction capacitance (~8 pF) helps maintain performance in circuits operating at moderate frequencies. However, it is not specifically optimized for very high-frequency switching applications.

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