1N5303UR-1/TR Silicon Rectifier Diode, 3A 200V, DO-41 Glass Package

  • Provides reliable voltage regulation to protect circuits from voltage spikes and ensure stable operation.
  • Features a specific breakdown voltage that safeguards sensitive components by clamping excessive voltage levels.
  • Compact package design offers board-space savings, facilitating integration into space-constrained electronic devices.
  • Ideal for surge protection in power supplies, enhancing device durability under transient voltage conditions.
  • Manufactured to meet strict quality standards, ensuring consistent performance and long-term reliability.
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1N5303UR-1/TR Overview

The 1N5303UR-1/TR is a high-reliability silicon avalanche diode designed for applications requiring precise voltage regulation and surge protection. Featuring a robust breakdown voltage and consistent performance under transient conditions, it is well-suited for industrial and electronic circuit protection roles. Packaged in a DO-41 axial form factor, it offers ease of integration into through-hole PCB designs. This diode ensures dependable operation over a wide temperature range, making it a preferred choice for engineers seeking stable and efficient voltage reference components. For detailed sourcing and technical support, refer to IC Manufacturer.

1N5303UR-1/TR Technical Specifications

ParameterSpecification
Reverse Breakdown Voltage (VBR)33 V (typical at 1 mA)
Test Current (IT)1 mA
Maximum Avalanche Current (IAVA)3 A (peak pulse)
Power Dissipation (PD)5 W (non-repetitive peak)
Junction Capacitance10 pF (typical at 1 MHz)
Operating Temperature Range-65??C to +175??C
Package TypeDO-41 Axial Lead
Forward Voltage Drop (VF)1.2 V max at 200 mA

1N5303UR-1/TR Key Features

  • Precise Avalanche Breakdown Voltage: Maintains a stable 33 V breakdown voltage at 1 mA test current, ensuring accurate voltage regulation in sensitive circuits.
  • High Peak Pulse Current Capability: Can safely handle up to 3 A peak avalanche current, providing robust protection against transient voltage spikes.
  • Wide Operating Temperature Range: Rated for -65??C to +175??C, allowing reliable performance in harsh industrial environments and automotive applications.
  • Low Junction Capacitance: With around 10 pF typical capacitance, it minimizes signal distortion in high-frequency applications.
  • Compact DO-41 Package: The axial leaded form factor simplifies installation and provides mechanical durability for through-hole PCB mounting.

1N5303UR-1/TR Advantages vs Typical Alternatives

This diode offers superior voltage stability and peak avalanche current handling compared to typical voltage reference diodes. Its low junction capacitance supports high-frequency operation with minimal signal degradation. Furthermore, the extended temperature rating and robust power dissipation capability enhance reliability and operational lifespan, making it an excellent choice for demanding industrial and automotive circuits where consistent voltage regulation and surge protection are critical.

Typical Applications

  • Voltage regulation in power supplies and voltage reference circuits requiring a precise 33 V breakdown threshold to maintain stable output voltages under varying loads.
  • Surge protection components in industrial control systems to safeguard sensitive electronics from transient voltage spikes.
  • Clamping and transient voltage suppression in telecommunications equipment where signal integrity and protection are essential.
  • Automotive electronics for reliable performance in harsh temperature environments and protection against electrical transients.

1N5303UR-1/TR Brand Info

The 1N5303UR-1/TR is part of a series of robust avalanche diodes engineered for precision voltage reference and transient protection. Manufactured to meet stringent quality standards, this component reflects the brand??s commitment to delivering reliable semiconductor devices optimized for industrial, automotive, and high-performance electronics sectors. With a legacy of consistent performance and durability, the product supports engineers and sourcing specialists in implementing dependable solutions across diverse applications.

FAQ

What is the significance of the avalanche breakdown voltage in this diode?

The avalanche breakdown voltage is the voltage at which the diode begins to conduct in reverse, allowing it to regulate voltage or safely divert transient currents. For this diode, the stable 33 V breakdown ensures it acts as an effective voltage reference or surge protector, maintaining circuit stability.

Can this diode handle high current surges during transient events?

Yes, it is designed to withstand peak avalanche currents up to 3 A, providing robust protection against voltage spikes and transient surges commonly encountered in industrial and automotive environments.

How does the operating temperature range affect its application?

The wide operating temperature range from -65??C to +175??C enables reliable function in harsh conditions, including extreme cold, heat, and automotive under-hood applications, ensuring long-term stability and performance.

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What type of package does this diode come in, and why is it important?

It is housed in a DO-41 axial lead package, which facilitates easy through-hole PCB mounting. This form factor provides mechanical strength and simplifies assembly, especially in industrial and legacy systems requiring durable components.

Is this diode suitable for high-frequency circuits?

Yes, with a typical junction capacitance of about 10 pF, it introduces minimal signal distortion, making it suitable for high-frequency applications where maintaining signal integrity is essential.

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