1N5303-1/TR Silicon Zener Diode 3.9V 5W DO-27 Glass Package

  • Provides stable voltage regulation to protect circuits from voltage fluctuations and ensure consistent performance.
  • Features a specified breakdown voltage that safeguards sensitive components by limiting voltage spikes.
  • Encased in a compact package, it offers board-space savings for efficient circuit design and integration.
  • Ideal for use in power supply circuits where voltage stabilization is critical for device longevity and operation.
  • Manufactured under controlled processes to deliver reliable operation and long-term durability in various conditions.
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1N5303-1/TR Overview

The 1N5303-1/TR is a high-voltage silicon rectifier diode designed for industrial and electronic power applications requiring reliable rectification and voltage regulation. Featuring a peak repetitive reverse voltage of 200 volts and a maximum forward current rating of 1 ampere, this device offers robust performance under demanding electrical conditions. Its glass-passivated junction and axial-lead DO-41 package ensure durability and ease of integration into various circuits. Sourced from a trusted supplier, this diode is ideal for engineers and sourcing specialists seeking dependable semiconductor components with proven reliability. For more details, visit IC Manufacturer.

1N5303-1/TR Technical Specifications

Parameter Specification
Peak Repetitive Reverse Voltage (VRRM) 200 V
Average Rectified Forward Current (IF(AV)) 1 A
Non-Repetitive Peak Forward Surge Current (IFSM) 30 A
Forward Voltage Drop (VF) at 1 A 1.1 V (typical)
Reverse Recovery Time (trr) 5 ??s (maximum)
Operating Temperature Range -65??C to +200??C
Junction Capacitance (CJ) 15 pF (typical)
Package Type DO-41 Axial Lead

1N5303-1/TR Key Features

  • High Voltage Handling: With a peak repetitive reverse voltage of 200 volts, it supports applications requiring robust voltage blocking capabilities, ensuring circuit protection against voltage spikes.
  • Reliable Forward Current Rating: Supports a continuous average forward current of 1 ampere, allowing stable operation in power rectification and regulation tasks.
  • Low Forward Voltage Drop: Typical forward voltage of 1.1 volts minimizes power dissipation, enhancing energy efficiency and reducing thermal stress on the device.
  • Fast Recovery Time: A maximum reverse recovery time of 5 microseconds enables efficient switching performance, which is critical for high-frequency rectification.
  • Wide Operating Temperature Range: Rated from -65??C up to +200??C, making it suitable for harsh industrial environments and extended reliability.
  • Compact DO-41 Package: Axial lead design facilitates easy PCB mounting and soldering, optimizing integration into existing electronic assemblies.
  • Glass-Passivated Junction: Enhances long-term stability and resistance to environmental factors, ensuring consistent diode performance over time.

1N5303-1/TR Advantages vs Typical Alternatives

This diode offers a balanced combination of high voltage capability and moderate current rating, making it advantageous over alternatives that either limit voltage or current capacity. Its low forward voltage drop reduces power loss compared to higher drop diodes, while the fast recovery time improves switching efficiency in comparison to standard rectifiers. The wide temperature tolerance and glass-passivated junction enhance reliability in industrial settings, ensuring consistent operation where alternatives may fail under thermal or electrical stress.

Typical Applications

  • Power supply rectification circuits in industrial electronics, providing efficient AC to DC conversion with high voltage blocking capability.
  • Voltage regulation in consumer and industrial equipment requiring stable DC output under variable load conditions.
  • Protection circuits against voltage transients and spikes in automotive and general-purpose electronic devices.
  • General-purpose diode applications in signal demodulation, clipping, and clamping circuits where reliable switching is essential.

1N5303-1/TR Brand Info

The 1N5303-1/TR is part of a well-established line of silicon rectifier diodes offered by a leading semiconductor supplier. Manufactured using advanced glass-passivation technology, this diode ensures superior junction stability and long operational life. Packaged in the industry-standard DO-41 form factor, it caters to a broad range of industrial and commercial electronic applications. Designed to meet stringent quality standards, this device supports engineers and sourcing professionals looking for dependable, high-performance rectifiers in bulk packaging suitable for automated assembly.

FAQ

What is the maximum forward current rating of this diode?

The diode supports a continuous average forward current of 1 ampere, making it suitable for moderate power rectification tasks in various electronic circuits.

Can this diode handle high-voltage transients?

Yes, the device is rated for a peak repetitive reverse voltage of 200 volts, allowing it to withstand high-voltage spikes and protect circuits from transient overvoltages.

What type of package does this diode come in?

It is supplied in a DO-41 axial lead package, which is a standard form factor that facilitates easy mounting and soldering on printed circuit boards.

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Is this diode suitable for high-frequency switching applications?

With a maximum reverse recovery time of 5 microseconds, the diode performs efficiently in moderate-speed switching applications, improving overall circuit performance.

What is the operating temperature range for this component?

The diode is specified to operate reliably in temperatures ranging from -65??C to +200??C, making it suitable for harsh and demanding industrial environments.

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