1N5300UR-1 Overview
The 1N5300UR-1 is a robust silicon rectifier diode engineered for high-voltage and high-current applications. Designed to handle repetitive peak reverse voltages up to 200 volts and a forward current of 3 amperes, this device is ideal for power supply, rectification, and voltage regulation circuits. Its low forward voltage drop ensures efficient conduction, minimizing power loss and heat generation. Manufactured to meet stringent reliability standards, the 1N5300UR-1 delivers consistent performance in industrial and electronic systems. For detailed specifications and sourcing, visit IC Manufacturer.
1N5300UR-1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 200 | V |
| Average Rectified Forward Current (IF(AV)) | 3 | A |
| Non-Repetitive Peak Surge Current (IFSM) | 100 | A |
| Forward Voltage Drop (VF) at 3A | 1.1 | V |
| Reverse Recovery Time (trr) | 2 | ??s |
| Operating Junction Temperature Range (TJ) | -65 to +150 | ??C |
| Storage Temperature Range (TSTG) | -65 to +150 | ??C |
| Package Type | DO-41 | – |
1N5300UR-1 Key Features
- High Voltage Handling: Capable of withstanding up to 200 V reverse voltage, ensuring resilience in demanding power circuits.
- 3 Amp Forward Current: Supports continuous forward current of 3 A, suitable for medium-power rectification tasks.
- Low Forward Voltage Drop: Minimizes power dissipation and heat generation, improving overall system efficiency.
- Fast Reverse Recovery Time: With a recovery time of 2 ??s, it effectively reduces switching losses in high-speed applications.
- Wide Operating Temperature Range: Functions reliably from -65??C to +150??C, allowing usage in harsh environmental conditions.
1N5300UR-1 Advantages vs Typical Alternatives
This diode offers superior voltage tolerance and current capacity versus many standard rectifiers, providing enhanced durability and electrical performance. Its lower forward voltage drop contributes to energy efficiency, while the fast recovery time reduces switching losses, making it advantageous for power electronics requiring reliable, efficient rectification under varied operating conditions.
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Typical Applications
- Power Supply Rectification: Ideal for converting AC to DC in regulated power supply units, ensuring stable and efficient operation under continuous load conditions.
- Voltage Regulation Circuits: Used in protecting sensitive circuits by maintaining voltage levels within safe limits.
- Industrial Equipment: Suitable for high-voltage industrial devices requiring durable rectification components.
- Motor Drives and Control Systems: Supports reliable current flow in motor control applications where robustness and fast switching are critical.
1N5300UR-1 Brand Info
The 1N5300UR-1 is produced by a leading semiconductor manufacturer known for quality and reliability in silicon rectifier diodes. This device is part of a comprehensive portfolio designed to meet industrial-grade demands, focusing on performance consistency and long-term durability. Backed by stringent quality control, it ensures dependable operation in critical electronic applications, making it a preferred choice for engineers and sourcing specialists.
FAQ
What is the maximum repetitive peak reverse voltage for this diode?
The maximum repetitive peak reverse voltage is rated at 200 volts, allowing the diode to withstand high-voltage spikes in power circuits without breakdown.
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Can this diode handle surge currents?
Yes, it can handle a non-repetitive peak surge current of up to 100 amperes, which makes it suitable for transient conditions such as startup surges or fault currents.
What are the thermal operating limits for this device?
The operating junction temperature range spans from -65??C to +150??C, supporting reliable performance in both extreme cold and high-temperature environments.
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How does the forward voltage drop affect overall efficiency?
A lower forward voltage drop, rated at approximately 1.1 volts at 3 amps, reduces power loss and heat generation, thereby improving the energy efficiency of the circuit.
Is this diode suitable for high-speed switching applications?
Yes, with a reverse recovery time of 2 microseconds, it offers fast switching capabilities, minimizing switching losses and making it appropriate for applications involving rapid current changes.
