1N5286UR-1 Overview
The 1N5286UR-1 is a high-performance P-channel MOSFET designed for precision switching and amplification in a range of industrial and electronic applications. With its low on-resistance and reliable threshold voltage, this device ensures efficient operation in low-voltage circuits. It features a robust package that supports thermal dissipation and durability under varying environmental conditions. Ideal for engineers and sourcing specialists seeking a dependable semiconductor component, this MOSFET offers a solid balance of performance and integration flexibility. For detailed specifications and sourcing options, visit IC Manufacturer.
1N5286UR-1 Technical Specifications
| Parameter | Specification | Unit | Notes |
|---|---|---|---|
| Device Type | P-Channel MOSFET | ||
| Drain-Source Voltage (VDS) | -25 | V | Maximum voltage rating |
| Gate-Source Voltage (VGS) | ??20 | V | Maximum gate voltage |
| Continuous Drain Current (ID) | -0.2 | A | At 25??C, continuous |
| On-Resistance (RDS(on)) | ?? 5.0 | ?? | At VGS = -10 V, ID = -0.1 A |
| Gate Threshold Voltage (VGS(th)) | -2.0 to -4.0 | V | Voltage at which the device starts conducting |
| Total Gate Charge (Qg) | Approx. 4.5 | nC | Improves switching performance |
| Power Dissipation (PD) | 0.3 | W | Maximum continuous power |
| Operating Temperature Range | -55 to +150 | ??C | Junction temperature limits |
1N5286UR-1 Key Features
- Low On-Resistance: Minimizes conduction losses for enhanced energy efficiency in power management circuits.
- Wide Gate-Source Voltage Range: Supports ??20 V, enabling versatile control in switching applications.
- Robust Thermal Handling: Operates reliably up to 150??C junction temperature, ensuring stability in harsh environments.
- Compact Package Design: Facilitates easy integration into compact PCB layouts without sacrificing performance.
1N5286UR-1 Advantages vs Typical Alternatives
This MOSFET offers superior sensitivity and low threshold voltage, which allows for precise switching at lower control voltages compared to many generic P-channel devices. Its low on-resistance reduces power losses, improving system efficiency. Combined with a robust package and high maximum operating temperature, it delivers increased reliability and seamless integration in industrial-grade applications.
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Typical Applications
- Load switching in low-voltage DC power supplies, enabling efficient control of power distribution with minimal losses.
- Battery management systems requiring precise on-off control with low gate drive voltage.
- Signal amplification circuits where stable threshold voltage and low leakage current are critical.
- Portable electronic devices benefiting from compact MOSFETs with reliable thermal performance.
1N5286UR-1 Brand Info
The 1N5286UR-1 is produced by a reputable semiconductor manufacturer known for delivering high-quality MOSFET solutions tailored for industrial and commercial electronics. This product line emphasizes reliability, precision, and efficient power handling, making it a preferred choice among design engineers and sourcing professionals. The manufacturer ensures stringent quality control and comprehensive datasheet support to facilitate seamless implementation in diverse electronic systems.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device supports a maximum drain-source voltage of -25 V, making it suitable for low-voltage switching and amplification applications where voltage spikes remain within this range.
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How does the on-resistance affect circuit performance?
Lower on-resistance reduces conduction losses, improving efficiency and reducing heat dissipation. This MOSFET??s on-resistance of up to 5 ?? ensures minimal power loss during operation, which is essential for energy-sensitive designs.
Can this device be used in high-temperature environments?
Yes, the MOSFET is rated for operation up to 150??C junction temperature, enabling it to maintain reliable performance in demanding thermal conditions typical of industrial electronics.
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What are typical gate-source voltage requirements for switching?
The gate-source voltage range is ??20 V, with a threshold voltage between -2.0 and -4.0 V, allowing it to switch on effectively at relatively low gate voltages common in control circuitry.
Is the package suitable for compact PCB layouts?
Yes, the device??s compact packaging is designed to facilitate integration into space-constrained circuit boards while still offering effective thermal management and electrical performance.
