1N5286UR-1/TR Overview
The 1N5286UR-1/TR is a high-performance MOSFET designed for reliable switching and amplification in power management applications. Offering a robust maximum drain-source voltage and low on-resistance, this component enables efficient energy control with minimal losses. Its compact SOT-23 package supports space-constrained designs while maintaining excellent thermal performance. Engineered for industrial-grade durability, the device is ideal for use in DC-DC converters, load switches, and battery management systems requiring fast switching and precise current handling. For sourcing and detailed technical assistance, visit IC Manufacturer.
1N5286UR-1/TR Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) | 3.5 | A |
| Gate Threshold Voltage (VGS(th)) | 0.5 ?C 1.4 | V |
| On-Resistance (RDS(on)) @ VGS=4.5V | 0.055 | ?? |
| Power Dissipation (PD) | 1.25 | W |
| Total Gate Charge (Qg) | 7.5 | nC |
| Operating Temperature Range | -55 to +150 | ??C |
| Package Type | SOT-23 | ?C |
1N5286UR-1/TR Key Features
- Low On-Resistance: The device??s minimal RDS(on) reduces conduction losses, enhancing energy efficiency in power switching applications.
- High Drain Current Capability: Supports continuous currents up to 3.5 A, enabling reliable operation in moderate power circuits.
- Compact SOT-23 Package: Facilitates integration into space-constrained PCB layouts while maintaining effective thermal dissipation.
- Wide Operating Temperature Range: Suitable for harsh industrial environments, with operation from -55??C to +150??C, ensuring long-term reliability.
1N5286UR-1/TR Advantages vs Typical Alternatives
This device offers a balanced combination of low on-resistance and moderate current handling in a compact package, making it advantageous compared to similar MOSFETs that may have higher losses or larger footprints. Its gate threshold voltage range allows precise control in low-voltage systems, improving switching accuracy and reducing power consumption. Additionally, the robust thermal rating ensures greater reliability under industrial operating conditions, supporting longer lifecycle and consistent performance.
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Typical Applications
- DC-DC converters where efficient switching and low conduction loss improve power regulation and battery life in portable and industrial equipment.
- Load switch applications requiring fast, precise on/off control to protect circuits and conserve energy.
- Battery management systems that demand reliable switching performance and thermal stability across varying temperatures.
- General-purpose switching in power supply modules and motor control circuits within industrial and consumer electronics.
1N5286UR-1/TR Brand Info
Manufactured by a leading semiconductor provider, this MOSFET is part of a well-established product line known for quality and consistency in power control components. The 1N5286UR-1/TR exemplifies the brand??s commitment to delivering reliable, efficient semiconductor solutions tailored for industrial and commercial electronics engineering. Designed for high-volume manufacturing and global availability, it supports demanding applications that require robust switching performance and tight quality controls.
FAQ
What is the maximum drain-source voltage rating for this MOSFET?
The maximum drain-source voltage is specified at 30 volts, making it suitable for low- to medium-voltage power switching applications.
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Can this device operate reliably at high temperatures?
Yes, it supports an operating temperature range from -55??C up to +150??C, which ensures stable performance in harsh and industrial environments.
What type of package does this MOSFET use?
The component is housed in a SOT-23 surface-mount package, which is compact and optimized for efficient thermal dissipation on printed circuit boards.
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What is the typical on-resistance and why is it important?
The device has a low on-resistance of approximately 0.055 ohms at a gate voltage of 4.5 V. This parameter is critical as it directly affects power loss and heat generation during operation.
Is this MOSFET suitable for battery management systems?
Yes, its current handling capabilities, low gate charge, and thermal stability make it well-suited for battery management and protection circuits requiring efficient switching and reliability.
