1N5286/TR Overview
The 1N5286/TR is a high-performance P-channel MOSFET designed for efficient switching and amplification in various electronic circuits. It features a low gate threshold voltage and a robust continuous drain current rating, making it suitable for power management applications where precision and reliability are critical. The device??s construction ensures stable operation under diverse environmental conditions, providing engineers with a dependable component for industrial and commercial semiconductor solutions. For detailed specifications and sourcing, visit IC Manufacturer.
1N5286/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | P-Channel MOSFET | – |
| Drain-Source Voltage (VDS) | -25 | V |
| Gate-Source Voltage (VGS) | ??20 | V |
| Continuous Drain Current (ID) | -6.5 | A |
| Power Dissipation (PD) | 12.5 | W |
| Gate Threshold Voltage (VGS(th)) | -2 to -4 | V |
| Drain-Source On-Resistance (RDS(on)) | 1.5 | ?? (max) |
| Operating Temperature Range | -55 to +150 | ??C |
| Package | TO-220 | – |
1N5286/TR Key Features
- Low Gate Threshold Voltage: Enables fast switching with minimal driving voltage, reducing power losses in control circuits.
- High Continuous Drain Current Capacity: Supports currents up to 6.5 A, suitable for medium-power applications requiring reliable conduction.
- Robust Power Dissipation: Rated for 12.5 W, allowing efficient heat management and enhanced device longevity in high-stress environments.
- TO-220 Package: Facilitates easy mounting and heat sinking, improving thermal performance and integration in industrial setups.
1N5286/TR Advantages vs Typical Alternatives
This device offers superior sensitivity and low gate threshold compared to many generic P-channel MOSFETs, ensuring precise control with less input power. Its reliable continuous current rating and robust thermal dissipation outperform typical alternatives, providing engineers with a durable and efficient solution for power switching. The TO-220 package further enhances integration flexibility and thermal management, making it an optimal choice in demanding semiconductor applications.
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Typical Applications
- Power switching in DC-DC converters and voltage regulation circuits, where efficient control of high current loads is essential for system stability and performance.
- Load switching in automotive electronic systems, enabling reliable operation under varying temperature and voltage conditions.
- Signal amplification in analog circuits requiring low noise and stable conduction characteristics.
- Battery management systems, supporting efficient charging and discharging control with minimized power loss.
1N5286/TR Brand Info
The 1N5286/TR is manufactured by established semiconductor producers known for consistent quality and adherence to industry standards. This part is widely recognized for its reliable performance in industrial and commercial electronics. Manufactured under strict quality control, it meets rigorous specifications for electrical and thermal parameters, ensuring dependable operation in various applications. The product is often provided with batch traceability and is supported by detailed datasheets and technical support from the brand.
FAQ
What is the maximum voltage rating for the 1N5286/TR?
The maximum drain-source voltage (VDS) for this MOSFET is -25 volts. It is important to ensure that the voltage applied does not exceed this rating to prevent device damage and maintain reliable operation.
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Can this device handle high current loads continuously?
Yes, it supports a continuous drain current of up to -6.5 amperes, which makes it suitable for medium-power applications requiring stable current conduction over extended periods.
What package type does the 1N5286/TR use, and why is it beneficial?
It comes in a TO-220 package, which provides excellent heat dissipation capabilities and ease of mounting on heatsinks or circuit boards, enhancing thermal management and mechanical stability in industrial environments.
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What is the typical gate threshold voltage, and how does it affect device operation?
The gate threshold voltage ranges from -2 to -4 volts, indicating the minimum gate-source voltage needed to turn the device on. This low threshold allows for efficient switching with reduced drive voltage requirements.
Is the 1N5286/TR suitable for use in automotive applications?
Given its robust electrical characteristics and operating temperature range from -55 to +150 ??C, it is well-suited for automotive systems where reliable switching under varying environmental conditions is necessary.
