1N5284UR-1/TR Overview
The 1N5284UR-1/TR is a high-performance silicon diode designed for reliable switching and rectification in industrial and electronic applications. Featuring a robust construction and precise electrical characteristics, this device ensures stable operation under varying load conditions. Its avalanche capability and low leakage current make it suitable for high voltage environments, providing dependable protection in power supply circuits. The diode’s compact surface-mount package supports efficient PCB layout and thermal management. Sourced from a trusted supplier, this diode meets stringent quality standards for durability and consistency. For more detailed information and sourcing, visit IC Manufacturer.
1N5284UR-1/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 200 | V |
| Average Forward Current (IF(AV)) | 1.0 | A |
| Peak Forward Surge Current (IFSM) | 30 | A |
| Forward Voltage Drop (VF) at 1A | 1.1 | V |
| Reverse Recovery Time (trr) | 50 | ns |
| Junction Temperature Range (Tj) | -65 to +150 | ??C |
| Storage Temperature Range (Tstg) | -65 to +150 | ??C |
| Maximum Power Dissipation (Pd) | 3.0 | W |
1N5284UR-1/TR Key Features
- High voltage blocking capability: Supports up to 200 V repetitive peak reverse voltage, ideal for high-voltage rectification tasks.
- Low forward voltage drop: Minimizes power loss during conduction, improving overall circuit efficiency and thermal performance.
- Fast switching speed: With a reverse recovery time of 50 ns, it enables efficient operation in fast switching applications, reducing switching losses.
- Robust surge current rating: Handles peak surge currents up to 30 A, ensuring durability during transient overload conditions.
- Wide operating temperature range: Ensures reliable performance from -65 ??C up to +150 ??C, suitable for harsh industrial environments.
- Compact surface-mount package: Facilitates automated assembly and enhances PCB space utilization for modern electronics.
- Low leakage current: Enhances circuit stability and reduces standby power consumption in sensitive designs.
1N5284UR-1/TR Advantages vs Typical Alternatives
This diode offers superior voltage tolerance and fast recovery compared to standard rectifiers, providing enhanced efficiency and reliability in power management. Its low forward voltage drop reduces energy loss, while the high surge current capacity ensures robustness under transient conditions. These characteristics make it a preferred choice over typical diodes that may lack such optimized performance for high-voltage, high-speed industrial applications.
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Typical Applications
- Rectification in power supplies where high voltage and fast switching are essential, ensuring efficient conversion and stable output voltage regulation.
- Protection circuits requiring avalanche capability to safeguard sensitive components from voltage spikes.
- General-purpose switching in industrial automation systems where durable and reliable diode performance is critical.
- Surface-mount applications demanding compact components with consistent electrical behavior under thermal stress.
1N5284UR-1/TR Brand Info
The 1N5284UR-1/TR is manufactured under strict quality control protocols to meet industrial standards for semiconductor devices. Designed for dependable operation in demanding environments, this diode represents the brand??s commitment to delivering high-performance components tailored for power electronics and industrial automation. The product is available through authorized distributors, ensuring authenticity and consistent supply for engineering and sourcing professionals.
FAQ
What is the maximum reverse voltage rating of this diode?
The maximum repetitive peak reverse voltage is 200 volts, allowing the diode to withstand high voltage stress without breakdown, suitable for various power electronic applications.
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Can this diode handle surge currents during transient events?
Yes, it supports a peak forward surge current of up to 30 amperes, providing resilience during short-term overloads or switching transients that commonly occur in power circuits.
What is the significance of the diode??s reverse recovery time?
The reverse recovery time of 50 nanoseconds indicates how quickly the diode can switch from conducting to blocking state, which is critical for minimizing switching losses in high-frequency applications.
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Is the diode suitable for high-temperature environments?
Absolutely, it operates reliably within a junction temperature range from -65 ??C to +150 ??C, making it ideal for industrial settings with wide temperature variations.
What packaging does this diode come in, and how does it benefit PCB design?
The diode utilizes a compact surface-mount package, which supports automated assembly processes and optimizes PCB space, contributing to more compact and efficient electronic designs.
