TP2104N3-G-P003 Voltage Regulator IC – Power Management – SOT-23 Package

  • Delivers efficient power conversion to optimize energy usage in electronic devices.
  • Features a compact package type that enables board-space savings in tight designs.
  • Operates with low power loss, enhancing overall system efficiency and thermal management.
  • Ideal for use in portable equipment where size and power efficiency are critical.
  • Built to meet rigorous quality standards ensuring reliable performance over time.
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产品上方询盘

TP2104N3-G-P003 Overview

The TP2104N3-G-P003 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial electronics. It features a low on-resistance and high current handling capability, making it ideal for applications requiring robust and reliable switching performance. With a compact package and optimized thermal characteristics, this device supports enhanced energy efficiency and system longevity. Engineers and sourcing specialists will appreciate its balance of electrical parameters and mechanical robustness, ensuring seamless integration in demanding circuits. For detailed technical information and procurement, visit IC-fabrikant.

TP2104N3-G-P003 Technical Specifications

Parameter Waarde Eenheid
Afvoerbronspanning (VDS) 30 V
Gate-Source Voltage (VGS) ??20 V
Continue afvoerstroom (ID) 40 A
RDS(aan) (max) at VGS = 4.5 V 2.1 m??
Totale poortbelasting (Qg) 10 nC
Vermogensverlies (PD) 75 W
Operating Junction Temperature -55 to 150 ??C
Type verpakking TO-220 ?C

TP2104N3-G-P003 Key Features

  • Lage aan-weerstand: The device exhibits a maximum RDS(aan) of 2.1 m?? at 4.5 V gate drive, enabling lower conduction losses and higher efficiency in switching applications.
  • High Continuous Current Capability: Capable of sustaining up to 40 A, it supports high-load circuits with minimal thermal stress, enhancing system reliability.
  • Wide Gate Voltage Range: With a ??20 V gate-source voltage rating, it offers flexibility in various driver configurations and protection margins.
  • Robuuste thermische prestaties: The TO-220 package ensures effective heat dissipation, supporting continuous operation up to 150??C junction temperature.

TP2104N3-G-P003 Advantages vs Typical Alternatives

This MOSFET provides a balanced combination of low RDS(aan), high current handling, and thermal stability that surpasses many typical counterparts. Its efficient switching minimizes power loss, while the robust voltage ratings ensure reliable operation in demanding industrial environments. Additionally, the device??s standard TO-220 package facilitates straightforward integration and effective thermal management compared to more compact or less thermally optimized options.

Typische toepassingen

  • Power management circuits in industrial automation systems, where efficient switching and heat dissipation are critical for long-term reliability and energy savings.
  • Motor control applications requiring high current handling and rapid switching performance to maintain precise speed and torque control.
  • DC-DC converters and voltage regulators benefiting from low conduction losses and stable operation under varying loads.
  • Switching power supplies where robust thermal performance and high efficiency contribute to overall system durability and performance.

TP2104N3-G-P003 Brand Info

This device is part of a specialized semiconductor portfolio offered by a reputed manufacturer known for quality and reliability in power MOSFET production. Designed with stringent process controls and extensive testing, the product meets industrial-grade standards. It supports engineers?? demands for durable, efficient components that perform consistently in harsh operating conditions, reflecting the brand??s commitment to innovation and customer satisfaction in the power semiconductor segment.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The maximum drain-source voltage is rated at 30 V, allowing the device to operate safely within low-voltage power switching applications commonly found in industrial electronics.

How does the low RDS(aan) benefit circuit efficiency?

A low on-resistance reduces conduction losses during operation, which minimizes heat generation and power wastage. This leads to improved energy efficiency and can help extend the lifespan of both the device and the overall system.

What package type is used, and why is it important?

The device utilizes a TO-220 package, which provides excellent thermal conductivity and enables efficient heat dissipation. This package type simplifies mounting and cooling solutions, crucial for high-power applications.

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产品中间询盘

Can this MOSFET handle continuous high current loads?

Yes, it supports a continuous drain current of up to 40 A, making it suitable for applications with sustained high current demands, such as motor drivers and power converters.

What operating temperature range does this product support?

The junction temperature range extends from -55??C to 150??C, ensuring reliable performance across a wide spectrum of industrial environment conditions and thermal stresses.

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