IKWH40N67PR7XKSA1 IGBT Transistor, 650V 40A, TO-247 Package

IKWH40N67PR7XKSA1 Overview

The IKWH40N67PR7XKSA1 is a high-performance insulated gate bipolar transistor (IGBT) engineered for demanding industrial power applications. This device delivers a strong combination of low switching losses and robust voltage handling, making it ideal for advanced power management systems. With its optimized electrical characteristics and reliable design, it supports applications ranging from motor drives to renewable energy systems. Leveraging advanced manufacturing processes, the part achieves outstanding efficiency and durability, contributing to lower overall system costs and improved operational uptime. For more details, visit IC-fabrikant.

IKWH40N67PR7XKSA1 Technical Specifications

Parameter	Waarde
Type apparaat	IGBT (Insulated Gate Bipolar Transistor)
Collector-uitgangsspanning (VCES)	650 V
Continuous Collector Current (IC)	60 A
Collector Power Dissipation (PC)	208 W
VCE(sat) (Saturation Voltage)	1.35 V
Gate Charge	172 nC
Package / Case	TO-247-3
Bedrijfstemperatuurbereik	-40??C to 150??C

IKWH40N67PR7XKSA1 Key Features

• High collector-emitter voltage rating of 650 V provides robust protection against voltage spikes in industrial systems.
• Continuous collector current support up to 60 A enables reliable operation in high-power applications, improving throughput and performance.
• Low collector-emitter saturation voltage (1.35 V) ensures reduced conduction losses, contributing to greater energy efficiency and cooler operation.
• Optimized gate charge (172 nC) minimizes switching losses, enhancing efficiency in high-frequency switching environments.
• Wide operating temperature range from -40??C to 150??C guarantees stable functionality in harsh industrial conditions.
• TO-247-3 package allows for straightforward integration into existing power module designs, facilitating easy assembly and thermal management.

IKWH40N67PR7XKSA1 Advantages vs Typical Alternatives

This IGBT device stands out from typical alternatives by combining a high voltage rating with low switching and conduction losses, resulting in greater energy efficiency and reliability. Its robust collector current capacity and industrial-grade temperature tolerance ensure stable operation under demanding conditions, making it a preferred choice for power electronics engineers seeking both performance and durability in their designs. Enhanced integration and efficiency further reduce system costs and maintenance needs.

Typische toepassingen

• Industrial motor drives: Delivers efficient power switching and high current capacity for variable frequency drives and servo control systems, ensuring smooth motor operation and reduced energy consumption.
• Solar inverters: Facilitates reliable energy conversion and stable operation in photovoltaic power systems, supporting grid-tied and off-grid renewable installations.
• Uninterruptible power supplies (UPS): Provides robust switching performance, allowing UPS systems to maintain critical load reliability during power disruptions.
• Welding equipment: Supports high current and voltage requirements typical in industrial welding machines, ensuring consistent arc stability and equipment longevity.

IKWH40N67PR7XKSA1 Brand Info

The IKWH40N67PR7XKSA1 is produced by a globally recognized manufacturer specializing in advanced power semiconductor solutions. This product reflects the brand??s commitment to innovation, reliability, and performance in demanding industrial environments. With a focus on supporting next-generation energy and automation applications, the manufacturer ensures each device meets rigorous quality standards, delivering consistent results in high-stress applications. Engineers and system designers can trust this IGBT for its proven dependability and integration flexibility.

FAQ

What is the maximum collector-emitter voltage for this IGBT?

The device supports a maximum collector-emitter voltage of 650 V, making it well-suited for medium to high-voltage industrial power switching tasks without risk of breakdown from transient voltages.

What package type is used for the IKWH40N67PR7XKSA1?

This device is encapsulated in a standard TO-247-3 package, which is widely used for high-power semiconductors. This package supports efficient heat dissipation and is compatible with common mounting and assembly practices.

How does the low V_CE(sat) value benefit my application?

A low collector-emitter saturation voltage (1.35 V) translates to lower conduction losses during operation. This improves overall system energy efficiency and helps maintain lower device temperatures, increasing reliability and lifespan.

Can this IGBT operate in harsh temperature environments?

Yes, it is rated for operation across a wide temperature range from -40??C up to 150??C. This allows for reliable use in challenging environments, such as industrial plants or outdoor installations.

What types of applications typically use this IGBT?

This device is commonly employed in industrial motor drives, solar inverters, uninterruptible power supplies, and welding equipment where high efficiency, robustness, and reliable switching performance are critical to system success.