The CY62147CV18LL-70BKI is a high-performance static RAM (SRAM) device designed for industrial and embedded system applications requiring fast, reliable memory access. Featuring a 1 Megabit density organized as 131,072 words by 8 bits, this SRAM offers a 70 ns access time, ensuring rapid data retrieval and storage. Its low operating voltage of 1.8 V combined with a standby current of 10 ??A supports energy-efficient designs. Packaged in a compact 48-pin TSOP II format, the device is suitable for space-constrained applications. This memory solution provides robustness and integration ease, making it ideal for high-speed cache, buffering, and data logging tasks. For further details, visit the IC-fabrikant.
CY62147CV18LL-70BKI Technical Specifications
Parameter
Specificatie
Memory Density
1 Megabit (131,072 x 8 bits)
Toegangstijd
70 ns
Bedrijfsspanning
1.8 V ?? 0.15 V
Standby Current (ISB1)
10 ??A (typisch)
Bedrijfstemperatuurbereik
-40 °C tot +85 °C
Type verpakking
48-pin TSOP II
Spanning gegevensbewaring
1.5 V (minimum)
Energieverlies
Max 330 mW (typical active)
CY62147CV18LL-70BKI Key Features
High-Speed Access: The 70 ns access time enables rapid data processing, essential for time-critical applications such as cache memory or real-time buffering.
Low Voltage Operation: Operates at a nominal 1.8 V, reducing power consumption and making it suitable for battery-powered or low-power industrial systems.
Low Standby Current: With a typical standby current of only 10 ??A, the device extends system battery life and reduces thermal stress.
Wide Temperature Range: Industrial-grade operation from -40??C to +85??C ensures reliable performance in harsh environments.
Compact 48-Pin TSOP II Package: Enables high-density PCB layouts and easy integration into space-constrained designs.
Data Retention Capability: Maintains data integrity down to 1.5 V, supporting power-down and backup scenarios.
Robust Power Dissipation Characteristics: Efficient power management minimizes heat generation during active operation, improving overall system reliability.
CY62147CV18LL-70BKI Advantages vs Typical Alternatives
This SRAM device outperforms typical alternatives by combining fast 70 ns access time with low 1.8 V operating voltage, enabling both speed and energy efficiency. Its low standby current minimizes power consumption during idle periods, enhancing battery life in portable and remote systems. The broad industrial temperature range ensures dependable operation under extreme conditions, while the compact TSOP II package supports high-density designs. These factors collectively provide superior integration, reliability, and performance compared to conventional SRAMs operating at higher voltages or slower speeds.
High-speed cache memory in embedded processors, improving system throughput and reducing latency in industrial control units.
Data buffering in communication devices requiring fast read/write cycles and low power consumption.
Non-volatile data logging where low standby current and data retention voltage are critical for preserving stored information during power interruptions.
Industrial automation systems operating under wide temperature ranges that demand reliable and fast memory components.
CY62147CV18LL-70BKI Brand Info
The CY62147CV18LL-70BKI is part of a robust SRAM family from a leading semiconductor manufacturer known for delivering reliable memory solutions tailored for industrial and embedded applications. This product line emphasizes low power consumption, high-speed access, and rugged packaging to meet the demands of harsh operating environments and stringent system requirements. The brand??s commitment to quality and performance ensures that this SRAM module integrates seamlessly into diverse applications, supporting long product lifecycles and consistent operational stability.
FAQ
What is the typical access time for the CY62147CV18LL-70BKI?
