AIKB40N65DF5ATMA1 Power MOSFET 650V 40A TO-247 Infineon Transistor

AIKB40N65DF5ATMA1 Overview

The AIKB40N65DF5ATMA1 is an advanced N-channel power MOSFET designed for high-efficiency switching and robust performance in demanding industrial and electronic applications. Featuring a 650V drain-source voltage and 40A continuous drain current, this device is optimized for low R_DS(aan), fast switching, and enhanced thermal performance. Its combination of superior electrical characteristics and reliable design ensures excellent power density and system reliability. For more details, visit IC-fabrikant.

AIKB40N65DF5ATMA1 Technical Specifications

Parameter	Waarde
Type transistor	N-Channel MOSFET
Afvoerbronspanning (VDS)	650 V
Continue afvoerstroom (ID)	40 A
RDS(aan) (Max)	0.055 ??
Gate Charge (Qg)	144 nC
Package / Case	TO-247-3
Bedrijfstemperatuurbereik	-55??C to 150??C
Mounting Type	Through Hole
Polarity	N-Channel

AIKB40N65DF5ATMA1 Key Features

• High drain-source voltage rating of 650V allows safe operation in high-voltage environments, reducing risk of breakdown in power conversion systems.
• Laag R_DS(aan) value minimizes conduction losses, increasing overall energy efficiency for users designing power supplies or motor drives.
• Fast switching performance supports high-frequency applications, lowering switching losses and improving thermal management in compact system designs.
• TO-247-3 package ensures robust thermal dissipation and easy integration into standard through-hole PCB assemblies.

AIKB40N65DF5ATMA1 Advantages vs Typical Alternatives

This device offers a compelling mix of high voltage capability, low on-resistance, and reliable thermal performance. Compared to typical alternatives, it enables greater efficiency, reduced heat generation, and enhanced system reliability. Its optimized gate charge and robust package make it suitable for demanding power conversion and industrial switching scenarios, ensuring consistent operation under varying loads.

Typische toepassingen

• Switch mode power supplies (SMPS) benefit from the high voltage rating and low R_DS(aan), allowing for efficient power conversion, reduced losses, and higher power density in industrial and commercial power systems.
• Motor control circuits utilize this MOSFET??s fast switching and robust current handling to drive motors with precision and efficiency, particularly in automation and robotics.
• Uninterruptible power supply (UPS) systems leverage the device??s reliability and thermal performance for stable, long-duration backup power switching and energy management.
• Inverter circuits for renewable energy, such as solar or wind power, employ this device to manage high voltages and currents with minimal loss, supporting sustainable energy infrastructure.

AIKB40N65DF5ATMA1 Brand Info

This product is part of a reputable family of power semiconductors renowned for delivering reliable, high-performance solutions in the power electronics sector. The AIKB40N65DF5ATMA1 is engineered to meet the rigorous demands of modern industrial applications, providing a balance of efficiency, durability, and integration flexibility. Its robust design reflects the brand??s commitment to quality and operational excellence in the global semiconductor market.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device supports a maximum drain-source voltage of 650V, making it well-suited for high-voltage switching and power conversion applications where robust isolation and breakdown prevention are required.

In which package is the AIKB40N65DF5ATMA1 supplied?

This MOSFET is provided in the TO-247-3 package, a widely adopted standard for through-hole mounting. This package offers excellent heat dissipation and mechanical stability, ideal for industrial and high-power designs.

What are the benefits of low R_DS(aan) in power applications?

Laag R_DS(aan) means reduced conduction losses during operation, which translates to higher efficiency and less heat generation. This is critical for power supply, inverter, and motor drive architectures aiming for compact, energy-efficient solutions.

How does the device perform in high-frequency switching environments?

The fast switching characteristics and optimized gate charge allow this MOSFET to operate efficiently in high-frequency environments. This reduces switching losses and enables designers to achieve higher power densities and improved thermal profiles.

What types of systems can benefit from integrating this MOSFET?

Applications including industrial power supplies, motor control, UPS systems, and renewable energy inverters can benefit from its high voltage capacity, robust current handling, and reliable operation, ensuring stable performance in demanding conditions.