2N7370-Darlington Transistor NPN High Gain Amplifier in TO-92 Package ?C ON Semiconductor

  • This transistor functions as a Darlington pair, providing high current gain for efficient signal amplification.
  • Its voltage rating supports robust operation in switching applications, ensuring stable performance under load.
  • The compact package type offers board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for driving motors or relays, it enhances control precision and reduces external component count.
  • Manufactured with quality standards to ensure long-term reliability and consistent electrical characteristics.
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2N7370-Darlington Overview

The 2N7370-Darlington is a high-gain, silicon NPN transistor designed to provide amplified current in a compact, reliable package. Featuring a Darlington pair configuration, it delivers significant current gain, making it ideal for switching and amplification applications where high sensitivity and low input current are critical. This device supports collector currents up to 500mA and a collector-emitter voltage rating of 60V, allowing operation in diverse industrial and control circuits. Its robust construction ensures reliable performance under varying temperature ranges and electrical stresses. For detailed technical support and sourcing, visit IC-fabrikant.

2N7370-Darlington Technical Specifications

Parameter Waarde Eenheid
Collector-uitgangsspanning (VCEO) 60 V
Collector-Basisspanning (VCBO) 80 V
Zender-Basisspanning (VEBO) 5 V
Collectorstroom (IC) 500 mA
Vermogensverlies (Ptot) 625 mW
DC stroomversterking (hFE) 1000 (typical) ?C
Overgangsfrequentie (fT) 2 MHz
Verbindingstemperatuur (Tj) 150 ??C

2N7370-Darlington Key Features

  • High current gain: The Darlington pair design achieves a typical DC gain of 1000, allowing low input current to control higher loads efficiently.
  • Voltage handling capability: Rated for collector-emitter voltages up to 60V, supporting a broad range of industrial control and amplification applications.
  • Compact power dissipation: With a maximum power rating of 625mW, it can handle moderate power loads while maintaining device reliability.
  • Robust thermal tolerance: Operating junction temperature up to 150??C ensures stable performance under elevated temperature conditions.

Typische toepassingen

  • Signal amplification in industrial automation systems, where sensitive input signals require significant current amplification with minimal distortion.
  • Relay driving circuits, leveraging its high current gain to efficiently switch mechanical or solid-state relays.
  • Power control in low to medium power switching applications, such as motor speed controllers and lighting dimmers.
  • Interface circuits between low-level digital logic and higher power loads, ensuring reliable switching and signal integrity.

2N7370-Darlington Advantages vs Typical Alternatives

This transistor offers superior current gain compared to standard single-transistor alternatives, reducing the required input drive current and enhancing sensitivity. Its voltage and current ratings provide flexibility for industrial-grade switching tasks, while maintaining efficient power dissipation. The integrated Darlington configuration simplifies circuit design by eliminating the need for cascading discrete transistors, resulting in improved reliability and compactness in control and amplification circuits.

2N7370-Darlington Brand Info

The 2N7370-Darlington is a widely recognized transistor historically manufactured by leading semiconductor producers specializing in analog and discrete components. Known for robust performance and ease of integration, this transistor has been a staple in industrial and commercial electronic designs. Its availability through authorized distributors ensures consistent quality and traceability, supporting engineers and sourcing specialists in high-volume and custom applications.

FAQ

What is the maximum collector current for this Darlington transistor?

The maximum collector current supported is 500mA, enabling it to drive moderate loads in switching and amplification circuits without damage or performance degradation.

Can this transistor handle high-voltage industrial environments?

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