2N6300-Darlington Transistor by ON Semiconductor ?C High Gain, TO-220 Package

  • This transistor functions as a Darlington pair, providing high current gain for efficient signal amplification.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent device performance.
  • The compact package design helps save board space, making it suitable for dense electronic assemblies.
  • Ideal for switching applications, it enables precise control of motors and relays in automotive or industrial systems.
  • Manufactured to meet quality standards, it offers dependable operation in demanding environments.
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2N6300-Darlington Overview

The 2N6300-Darlington is a high-voltage, high-gain NPN transistor designed for robust power switching and amplification applications. Featuring a Darlington pair configuration, it offers significant current gain, enabling efficient control of high-current loads with minimal input drive. This device is well-suited for industrial electronics where reliable switching and amplification under elevated voltage conditions are essential. Its rugged construction ensures dependable performance in demanding environments, making it a preferred choice for engineers seeking a balance between power handling and precise control. For more details, visit IC-fabrikant.

2N6300-Darlington Key Features

  • High current gain: Provides amplified output current with minimal base drive, simplifying input signal requirements and reducing power consumption.
  • High voltage handling capability: Supports collector-emitter voltages suitable for industrial power control applications, ensuring safe operation under elevated voltages.
  • Robust power dissipation: Designed to handle substantial power loads, improving device reliability and extending operational lifetime in demanding conditions.
  • Darlington transistor configuration: Enhances switching speed and linearity, aiding precision control in amplification tasks.

2N6300-Darlington Technical Specifications

ParameterWaardeUnits
Collector-uitgangsspanning (VCEO)100V
Collector-Basisspanning (VCBO)120V
Zender-Basisspanning (VEBO)5V
Collectorstroom (IC)4A
Vermogensverlies (PD)115W
DC stroomversterking (hFE)5000 min?C
Overgangsfrequentie (fT)6MHz
Verbindingstemperatuur tijdens bedrijf (TJ)200??C

2N6300-Darlington Advantages vs Typical Alternatives

This Darlington transistor excels in delivering high current gain and voltage tolerance, surpassing many standard transistors in sensitivity and power handling. Its integrated pair configuration reduces external component count, improves switching accuracy, and enhances thermal stability. Compared to typical discrete transistor arrays, it offers better linearity and consistent performance under load, making it ideal for precision industrial control circuits requiring reliable, high-power switching.

Typische toepassingen

  • Industrial motor control circuits where high current switching and voltage endurance are critical for safe and efficient operation.
  • Power amplifiers demanding high gain and linear response to amplify low-level signals into high-current outputs.
  • Relay drivers that require robust transistor switches to manage coil currents reliably without excessive input power.
  • General-purpose switching devices in automation systems where durability and consistent performance are mandatory.

2N6300-Darlington Brand Info

The 2N6300-Darlington transistor is a reliable semiconductor device manufactured under stringent quality standards to meet industrial demands. It is recognized for its durability and stable performance in power switching and amplification roles. Designed with a Darlington pair structure, this transistor combines high gain and voltage capabilities, backed by proven manufacturing processes ensuring consistent device parameters and long-term operational reliability in harsh environments.

FAQ

What is the maximum collector current rating of this Darlington transistor?

The maximum collector current for this device is rated at 4 amperes, enabling it to handle significant load currents in power switching and amplification applications without compromising reliability.

How does the Darlington configuration benefit circuit design?

The Darlington configuration provides very high current gain, meaning a small input current can control a much larger output current. This reduces the required drive signal strength and minimizes power loss on the input side, simplifying circuit design and improving efficiency.

What voltage limits should be observed when using this transistor?

This transistor supports a collector-emitter voltage up to 100 V and a collector-base voltage up to 120 V. Operating within these limits is essential to avoid breakdown and ensure long-term device integrity.

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Can this transistor handle high power dissipation in industrial environments?

Yes, it is rated for a maximum power dissipation of 115 watts, making it suitable for industrial applications that demand high power operation. Proper heat sinking and thermal management are recommended to maintain optimal performance.

What is the typical frequency response of this device?

The transistor has a transition frequency of approximately 6 MHz, which is adequate for many switching and amplification tasks in industrial control circuits but may not be suited for high-frequency RF applications.

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