2N3055-Transistor Power Amplifier NPN Bipolar TO-3 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling stronger output in various electronic circuits.
  • Its high current capacity ensures stable performance under demanding load conditions.
  • The robust TO-3 metal can package offers excellent heat dissipation and durability in compact spaces.
  • Ideal for audio amplifiers and power regulators, it helps maintain consistent voltage and sound quality.
  • Manufactured to meet industry standards, it provides reliable operation over extended periods.
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2N3055-Transistor Overview

The 2N3055 is a robust NPN power transistor widely used in industrial and consumer electronics for its high current and voltage handling capabilities. Designed for switching and amplification tasks, it supports collector currents up to 15A and collector-emitter voltages up to 60V. Its durable TO-3 metal package ensures effective heat dissipation, making it suitable for high-power applications. The device??s combination of durability and performance makes it an essential choice for engineers seeking reliable power transistors. For sourcing and detailed specifications, visit IC-fabrikant.

2N3055-Transistor Key Features

  • Hoge stroomverwerking: Supports collector current up to 15A, enabling efficient power management in demanding circuits.
  • Voltage Tolerance: Collector-emitter voltage rating of 60V allows operation in medium-voltage environments without breakdown.
  • Robust TO-3 Package: Ensures superior thermal conductivity and mechanical strength for reliable long-term use.
  • Versatile Amplification: Suitable for linear and switching applications, enhancing design flexibility.

2N3055-Transistor Technical Specifications

Parameter Specificatie
Type transistor NPN Bipolar Junction
Collector-Emitter Voltage (Vce) 60 V
Collectorstroom (Ic) 15 A
Vermogensdissipatie (Pd) 115 W (max)
Versterking bandbreedteproduct (fT) 2.5 MHz (typical)
DC stroomversterking (hFE) 20 to 70
Type verpakking TO-3 Metal Can
Operating Junction Temperature -65 °C tot +200 °C

2N3055-Transistor Advantages vs Typical Alternatives

Compared to many typical power transistors, this device offers superior current capacity and voltage tolerance within a rugged TO-3 package that enhances thermal dissipation and reliability. Its broad gain range and high power rating make it a preferred solution for demanding power amplification and switching applications where stability and durability are critical.

Typische toepassingen

  • Power Amplifiers: Commonly deployed in audio and industrial amplifier circuits where reliable high current and voltage handling are necessary for consistent performance.
  • Voltage Regulators: Used in linear voltage regulator circuits to maintain stable output voltage under varying load conditions.
  • Switching Circuits: Suitable for medium-power switching applications due to its fast switching capabilities and thermal robustness.
  • Motor Control: Applied in DC motor driver circuits requiring high current switching with efficient heat dissipation.

2N3055-Transistor Brand Info

The 2N3055 transistor is a classic power transistor widely manufactured by several semiconductor suppliers. Known for its rugged construction and dependable performance, it has been a staple in power electronics design for decades. The device is often branded under established semiconductor manufacturers who ensure consistent quality and adherence to industry standards.

FAQ

What is the maximum collector current supported by this transistor?

This transistor can handle a maximum continuous collector current of 15 amperes, making it suitable for high current power applications such as amplifiers and motor controllers.

Can the transistor operate at high temperatures?

Yes, it is rated for an operating junction temperature up to 200??C, which allows it to maintain performance and reliability under elevated thermal conditions typical in power electronics.

What type of package does the transistor come in?

The device is housed in a TO-3 metal can package, providing excellent heat dissipation and mechanical durability, essential for power transistor applications.

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Is this transistor suitable for switching applications?

Yes, it is designed to perform efficiently in switching circuits due to its fast switching speed and capacity to handle high currents and voltages.

What is the typical current gain (hFE) of the device?

The DC current gain ranges from 20 to 70, allowing for flexibility in amplification and switching designs depending on circuit requirements.

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