2N2484-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a specified voltage rating that ensures stable performance under operating conditions.
  • The compact package design aids in saving board space, facilitating integration in tight circuit layouts.
  • Ideal for switching applications, it helps manage power flow reliably in low- to medium-power devices.
  • Manufactured to meet quality standards, it offers consistent durability and dependable operation over time.
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2N2484-Transistor Overview

The 2N2484 is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching in industrial and commercial electronics. It is optimized for medium power and medium voltage applications, featuring robust current handling and gain characteristics. This transistor offers reliable operation with a collector-to-emitter voltage rating suitable for a wide range of circuits. Its construction ensures consistent performance under varying temperature and load conditions, making it an excellent choice for analog and digital circuit designers. For more detailed technical information and sourcing options, visit IC-fabrikant.

2N2484-Transistor Key Features

  • High collector current capacity: Supports continuous collector current up to 3A, enabling efficient handling of medium power loads in switching and amplification tasks.
  • Collector-emitter voltage rating of 60V: Provides sufficient voltage margin for a variety of industrial control and power regulation applications.
  • Gain bandwidth product: Offers a transition frequency (fT) of approximately 20 MHz, allowing for effective signal amplification in moderate-frequency circuits.
  • Robust thermal performance: With a maximum junction temperature of 200??C, it maintains reliability and longevity under demanding operating conditions.

2N2484-Transistor Technical Specifications

Parameter Waarde Eenheid
Collector-Emitter Voltage (V_CEO) 60 V
Collector Current (I_C) 3 A
Power Dissipation (P_D) 30 W
Overgangsfrequentie (fT) 20 MHz
DC Current Gain (h_FE) 40?C160 ??
Junction Temperature (T_j) 200 ??C
Collector-Base Voltage (V_CBO) 80 V
Emitter-Base Voltage (V_EBO) 5 V
Storage Temperature Range -65 to +200 ??C

2N2484-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its balance of high collector current capacity and moderate voltage ratings, which often surpass typical low-power transistors. It delivers reliable gain across a wide temperature range and offers robust power dissipation. Compared to alternatives, it provides improved thermal stability and consistent performance, making it a dependable choice for engineers seeking efficient switching and amplification in industrial and power control circuits.

Typische toepassingen

  • Medium power amplifier stages in audio and signal processing circuits, benefiting from the transistor??s moderate gain and high current handling.
  • Switching devices in power supplies and relay drivers requiring reliable operation at voltages up to 60V.
  • Industrial control systems where consistent performance over temperature variations is critical.
  • General-purpose switching applications in automotive and consumer electronics, leveraging its robust design and power ratings.

2N2484-Transistor Brand Info

The 2N2484 transistor is a widely recognized semiconductor device in the discrete transistor market, known for its versatility and reliability. It is commonly produced by established semiconductor manufacturers adhering to industry-standard quality and testing processes. This component has been a staple in electronic design for decades, offering engineers a trusted solution for medium power amplification and switching tasks. Its proven track record ensures availability and compatibility with a broad range of electronic circuits.

FAQ

Wat is de maximale collectorstroom voor deze transistor?

The transistor supports a continuous collector current of up to 3 amperes, enabling it to handle moderate power loads without degradation, suitable for amplification and switching applications.

Can this transistor operate reliably at high temperatures?

Yes, it is rated for a maximum junction temperature of 200??C, ensuring stable operation and longevity even in demanding thermal environments commonly found in industrial electronics.

What is the typical gain bandwidth product of this device?

The transition frequency (fT) is approximately 20 MHz, which allows for effective signal amplification in low to medium frequency applications, making it versatile for various analog circuits.

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Is the transistor suitable for switching applications in power supplies?

Absolutely. With a collector-emitter voltage rating of 60V and high current capability, it is well-suited for switching in power supply circuits and relay drivers requiring robust performance.

How does this transistor compare to low-power signal transistors?

This device offers higher current and power dissipation ratings than typical low-power transistors, providing enhanced reliability and performance in medium power circuits where higher load capacity and thermal stability are necessary.

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