MF2DLH1001DUF/02V High-Speed Memory Module – 16GB DDR4 SO-DIMM Package

MF2DLH1001DUF/02V Overview

The MF2DLH1001DUF/02V is a high-performance semiconductor device designed for precise power management and signal processing in industrial electronics. Engineered to deliver efficient switching with robust thermal stability, this component supports a wide range of voltage and current applications. Its compact form factor and reliable operation make it an ideal choice for engineers focused on optimizing system performance while minimizing energy loss. Backed by rigorous quality standards, the device offers consistent operation across varying environmental conditions, ensuring durability and long-term reliability. For sourcing specialists and design engineers, it presents a compelling balance of power efficiency and integration flexibility. Learn more at IC 제조업체.

MF2DLH1001DUF/02V Technical Specifications

매개변수	사양
최대 드레인-소스 전압(VDS)	100 V
연속 드레인 전류(ID) at 25??C	50 A
게이트 임계 전압(VGS(th))	2.0 ?C 4.0 V
RDS(on) (Max) at VGS = 10 V	2.5 m??
총 게이트 요금(Qg)	60 nC (typical)
작동 접합 온도(Tj)	?C55 to +175 ??C
패키지 유형	PowerFLAT? 5×6 mm
Thermal Resistance Junction-to-Case (R??JC)	0.6 ??C/W
Input Capacitance (Ciss)	2,300 pF (typical)
Body Diode Forward Voltage (VSD)	1.6 V at ISD = 50 A

MF2DLH1001DUF/02V Key Features

• 낮은 R_DS(on) Value: With a maximum on-resistance of 2.5 m?? at a 10 V gate drive, this device reduces conduction losses, enhancing overall power efficiency in high-current switching applications.
• 높은 전류 용량: Supports continuous drain currents up to 50 A, making it well-suited for demanding power circuits requiring robust current handling.
• 넓은 작동 온도 범위: Operates reliably between ?C55 ??C and +175 ??C, ensuring stability in harsh industrial environments and extending operational lifetime.
• Compact PowerFLAT? Package: The 5×6 mm footprint allows for high-density PCB layouts while facilitating effective thermal management through a low thermal resistance junction-to-case rating.
• Efficient Gate Charge Characteristics: Typical total gate charge of 60 nC enables faster switching speeds, reducing switching losses and improving system responsiveness.
• Robust Body Diode Performance: The integrated body diode with a forward voltage of 1.6 V supports efficient freewheeling in synchronous rectification and motor control circuits.
• Enhanced Thermal Management: Low thermal resistance allows for effective heat dissipation, minimizing thermal stress and allowing for compact system designs.

MF2DLH1001DUF/02V Advantages vs Typical Alternatives

This device offers superior conduction efficiency with its exceptionally low on-resistance, directly translating to reduced power loss compared to standard MOSFETs in similar voltage classes. Its high current rating and extended temperature range improve system reliability in harsh industrial conditions. The compact PowerFLAT? package supports better thermal dissipation and integration flexibility, making it more advantageous over traditional through-hole or larger footprint components. These features collectively enhance operational accuracy and energy efficiency in power management applications.

일반적인 애플리케이션

• High-efficiency DC/DC converters in industrial power supplies requiring low conduction loss and high current capability to optimize energy use and thermal performance.
• Motor drive controllers where fast switching and robust current handling enhance performance and reliability under variable load conditions.
• Battery management systems that benefit from low R_DS(on) and wide temperature operation to ensure safe and efficient charging cycles.
• Load switching circuits in automation equipment demanding compact size and reliable operation across fluctuating ambient temperatures.

MF2DLH1001DUF/02V Brand Info

Manufactured by a leading semiconductor producer, this device is part of a comprehensive portfolio targeting power management solutions for industrial electronics. The product line focuses on delivering high efficiency, reliability, and compactness to meet the growing demands of modern electronic systems. Each device undergoes stringent quality checks to comply with international standards, ensuring consistent performance in mission-critical applications. This model exemplifies the brand??s commitment to innovation and customer-centric design, catering specifically to engineers and sourcing professionals looking for dependable and high-performance components.

자주 묻는 질문

What is the maximum voltage rating for this device?

The component is rated for a maximum drain-to-source voltage of 100 V, making it suitable for medium voltage power conversion and switching applications within industrial environments.

How does the low R_DS(on) value benefit my design?

A low on-resistance reduces conduction losses during operation, enhancing overall power efficiency. This leads to less heat generation, improving thermal management and potentially allowing for smaller heat sinks or denser PCB layouts.

Can this device operate in high-temperature environments?

Yes, it is designed to function reliably over a wide junction temperature range from ?C55 ??C to +175 ??C, which supports use in demanding industrial settings where temperature fluctuations are common.

What packaging does this product use, and why is it important?

The device is housed in a compact PowerFLAT? 5×6 mm package. This package type offers a low thermal resistance path for heat dissipation while maintaining a small footprint, enabling efficient cooling and space savings on the PCB.

Is this device suitable for motor control applications?

Absolutely. Its high continuous drain current rating and integrated body diode with a low forward voltage drop make it well-suited for motor drive circuits, ensuring efficient switching and reliable operation under dynamic load conditions.