STD45P4LLF6AG STMicroelectronics 45V N-Channel MOSFET, Power MOSFET, TO-220 Package

  • This device provides efficient power conversion, enabling stable operation in various electronic systems.
  • Operating at a switching frequency suitable for minimizing electromagnetic interference enhances overall system performance.
  • The compact package type supports board-space savings, allowing integration into designs with limited area.
  • Ideal for embedded power supplies in industrial equipment, it ensures consistent energy delivery under varying loads.
  • Manufactured with stringent quality controls, it maintains reliability over extended operational periods.
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STD45P4LLF6AG Overview

The STD45P4LLF6AG is a high-performance P-channel MOSFET designed for efficient power switching and management in industrial and automotive applications. Featuring a low on-resistance and fast switching capabilities, this device supports enhanced energy efficiency and thermal performance. Its rugged construction ensures reliable operation under demanding conditions, making it an ideal choice for load switching, DC-DC converters, and motor control circuits. Sourced from a reputable ICメーカー, this component enables engineers to optimize system performance while maintaining robust operational safety.

STD45P4LLF6AG Technical Specifications

パラメータ 仕様
Type P-channel MOSFET
ドレイン・ソース間電圧 (V)DS) -40 V
連続ドレイン電流 (ID) -45 A (at 25??C)
ゲートしきい値電圧 (V)GS(th)) -2.0 V (typical)
オン抵抗(RDS(オン)) 6.5 m?? (max) at VGS = -10 V
Total Gate Charge (Qg) 21 nC (typical)
Junction-to-Ambient Thermal Resistance (R??JA) 35 ??C/W
動作温度範囲 -55℃~+150℃の範囲
パッケージ LFPAK56

STD45P4LLF6AG Key Features

  • 低オン抵抗: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
  • 高い電流処理能力: Supports continuous drain currents up to 45 A, enabling use in demanding power applications.
  • 高速スイッチング性能: Low gate charge enhances switching speed, beneficial for high-frequency DC-DC converters and PWM motor drives.
  • Robust Thermal Characteristics: Efficient heat dissipation ensures reliable operation under elevated temperature conditions.

代表的なアプリケーション

  • Load switching in automotive power management systems, where durability and efficiency are critical for battery and subsystem control.
  • DC-DC converters for industrial power supplies requiring efficient high-current switching devices.
  • Motor control circuits including brushless DC motors, benefiting from fast switching and low conduction losses.
  • Power management in telecommunications equipment, supporting reliable operation in compact, heat-sensitive environments.

STD45P4LLF6AG Advantages vs Typical Alternatives

This MOSFET offers a competitive edge through its combination of low on-resistance and high current capacity, delivering superior power efficiency and thermal management compared to common alternatives. Its fast switching and low gate charge reduce switching losses, enabling higher frequency operation with less heat buildup. The robust package and wide operating temperature range enhance reliability in harsh industrial and automotive environments, making it a dependable choice for engineers seeking optimized performance and durability.

STD45P4LLF6AG Brand Info

The STD45P4LLF6AG is manufactured by STMicroelectronics, a global leader in semiconductor solutions for industrial, automotive, and consumer electronics. Known for innovation and quality, STMicroelectronics designs and produces a broad portfolio of power MOSFETs tailored to deliver efficiency, reliability, and integration ease. This device reflects the company??s commitment to enabling next-generation power management solutions with advanced semiconductor technologies.

よくあるご質問

What is the maximum drain-source voltage rating of this MOSFET?

The maximum drain-source voltage (VDS) rating is -40 volts, which means the device can safely block voltages up to 40 V in the off state without breakdown, suitable for a variety of low-voltage power applications.

How does the low on-resistance benefit system performance?

Low on-resistance reduces the voltage drop across the MOS

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