STD26P3LLH6 Toshiba IGBT Module, High Power Switching, 3-Phase Package

  • Provides efficient voltage regulation, ensuring stable power delivery for sensitive electronic components.
  • Features a compact package that saves board space, supporting smaller and more integrated device designs.
  • Operates with low power consumption, enhancing overall system energy efficiency and thermal management.
  • Ideal for portable and battery-powered applications, maintaining consistent performance under varying load conditions.
  • Designed to meet rigorous quality standards, offering reliable operation over extended use periods.
アナログ・デバイセズ社-ロゴ
产品上方询盘

STD26P3LLH6 Overview

The STD26P3LLH6 is a high-performance P-channel MOSFET designed for efficient power management in industrial and automotive applications. It features a low RDS(オン) and robust avalanche energy capability, ensuring reliable operation under demanding conditions. This device supports compact designs with its low gate charge and fast switching characteristics, making it ideal for DC-DC converters, load switching, and battery protection circuits. Engineered for enhanced thermal stability and ruggedness, the STD26P3LLH6 delivers dependable performance in high-current environments. For detailed technical information and sourcing, visit the ICメーカー ウェブサイトをご覧ください。

STD26P3LLH6 Technical Specifications

パラメータ価値単位
ドレイン・ソース間電圧 (V)DS)30V
連続ドレイン電流 (ID) at 25??C-26A
許容損失(PD)50W
Drain-Source On-Resistance (RDS(オン))3.5m??
ゲートしきい値電圧 (V)GS(th))-1.0 to -3.0V
Total Gate Charge (Qg)12エヌシー
Maximum Junction Temperature (Tj)150??C
Single Pulse Avalanche Energy (EAS)72mJ

STD26P3LLH6 Key Features

  • 低オン抵抗: Minimizes conduction losses, improving overall energy efficiency in power circuits.
  • High Continuous Drain Current Capability: Supports heavy load operation essential for industrial power management.
  • Robust Avalanche Energy Rating: Ensures reliability during inductive load switching and transient voltage spikes.
  • Compact SMD Package: Enables space-saving designs in dense PCB layouts.
  • Fast Switching Speeds: Reduces switching losses and enhances performance in high-frequency applications.
  • 広い動作温度範囲: Suitable for harsh industrial environments with high thermal demands.

代表的なアプリケーション

  • DC-DC converters in automotive and industrial power supplies, leveraging the device??s low RDS(オン) for efficient voltage regulation and power delivery.
  • Load switching circuits requiring reliable high current handling and low power dissipation.
  • Battery management systems, where robust avalanche energy capability protects against voltage transients.
  • Motor control and power distribution applications demanding fast switching and thermal robustness.

STD26P3LLH6 Advantages vs Typical Alternatives

This P-channel MOSFET offers a superior balance of low conduction resistance and high current capability compared to typical alternatives. Its robust avalanche energy rating provides enhanced protection in inductive load conditions, while the compact package facilitates integration into space-constrained designs. The combination of fast switching and thermal stability ensures efficient and reliable operation, making it an excellent choice for demanding industrial and automotive power management solutions.

STD26P3LLH6 Brand Info

The STD26P3LLH6 is a product from STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in high-performance power MOSFETs tailored for automotive, industrial, and consumer electronics sectors. This device is part of their comprehensive portfolio focused on delivering efficiency, ruggedness, and integration ease. ST??s extensive manufacturing capabilities and quality controls ensure consistent product reliability and availability for large-scale industrial applications.

よくあるご質問

What is the maximum drain-source voltage rating of the STD26P3

申し込み

, ,

コストと時間の節約

迅速なグローバル配送

オリジナル部品保証

専門家によるアフターサービス

より良い価格をお探しですか?