CY62256NLL-55ZXAKJ Overview
The CY62256NLL-55ZXAKJ is a high-performance 32K x 8-bit static RAM (SRAM) device designed for fast, reliable data storage in industrial and embedded applications. Featuring a 55ns access time and low power consumption, it supports seamless operation in systems requiring quick memory read/write cycles. The non-volatile characteristics of this device ensure data retention during power interruptions, enhancing system stability. Its standard 28-pin SOJ package facilitates straightforward integration into existing designs. Engineers and sourcing specialists will find this memory solution ideal for applications demanding robust performance and dependable data integrity. More details are available at ICメーカー.
CY62256NLL-55ZXAKJ Technical Specifications
パラメータ | 仕様 |
---|---|
メモリーサイズ | 32K x 8 bits (256 Kbits) |
アクセス時間 | 55 ns |
動作電圧 | 5 V ??10% |
Data Retention Voltage | 2 V minimum |
パッケージタイプ | 28-pin SOJ |
動作温度範囲 | 0??C to 70??C |
Input/Output Type | TTL互換 |
スタンバイ電流 | 5 mA max |
動作電流 | 100 mA max |
Data Retention Current | 150 ??A max |
CY62256NLL-55ZXAKJ Key Features
- Fast 55ns access time: Enables rapid data retrieval, enhancing system throughput and reducing latency in time-critical applications.
- 低消費電力: Supports both active and standby modes with minimal current draw, extending battery life and reducing thermal load in embedded systems.
- Non-volatile data retention: Maintains stored data reliably during power-down conditions at voltages as low as 2 V, ensuring data integrity in critical applications.
- TTL compatible inputs and outputs: Facilitates easy interfacing with standard digital logic circuits without additional level shifting.
- Industry-standard 28-pin SOJ package: Simplifies PCB layout and allows easy replacement or upgrade in legacy systems.
CY62256NLL-55ZXAKJ Advantages vs Typical Alternatives
This SRAM device offers a compelling combination of speed, power efficiency, and data retention compared to typical volatile memories. Its low standby current and robust data retention voltage minimize power requirements while safeguarding stored information during power interruptions. The 55ns access time accelerates data handling beyond many alternatives, making it a superior choice for applications demanding fast and reliable memory access without complex refresh cycles.
ベストセラー商品
代表的なアプリケーション
- Embedded systems requiring fast and reliable non-volatile memory storage, such as industrial controllers and instrumentation, where quick access and data retention are critical for performance and safety.
- Cache memory in communication equipment to accelerate data buffering and improve throughput.
- Data logging devices that benefit from low power standby and reliable memory retention during power cycles.
- Automotive electronic modules where robust operation over a wide temperature range and power cycling resilience are essential.
CY62256NLL-55ZXAKJ Brand Info
The CY62256NLL-55ZXAKJ is a product from an established semiconductor manufacturer known for delivering high-quality memory solutions tailored for industrial and embedded applications. This SRAM module embodies the brand??s commitment to performance, reliability, and power efficiency, meeting stringent industry standards and providing engineers with a dependable memory component optimized for demanding environments.
よくあるご質問
What is the access time of the CY62256NLL-55ZXAKJ, and why is it important?
The device features a 55ns access time, which defines how quickly data can be read from or written to the memory. This fast access speed is crucial for applications that require rapid data processing and minimal latency, ensuring efficient system performance.
注目商品
How does the CY62256NLL-55ZXAKJ maintain data during power loss?
This SRAM has a data retention voltage as low as 2 V, allowing it to preserve stored information even when the primary power supply is interrupted or reduced. This feature is essential for maintaining data integrity in