BSC050N10NS5ATMA1 Overview
The BSC050N10NS5ATMA1 is an advanced N-channel MOSFET optimized for high-efficiency power switching and load management across a diverse range of industrial and commercial electronics. With its low RDS(オン) and robust voltage handling, this device is designed to meet the rigorous demands of modern power architectures, offering reliable and efficient operation. Its compact SuperSO8 package supports space-constrained designs, making it an ideal choice for engineers seeking performance and scalability. For further details, refer to the ICメーカー ウェブサイトをご覧ください。
BSC050N10NS5ATMA1 Technical Specifications
| パラメータ | 価値 |
|---|---|
| トランジスタ・タイプ | N-Channel MOSFET |
| ドレイン・ソース間電圧 (V)DS) | 100 V |
| 連続ドレイン電流 (ID) | 120 A |
| RDS(オン) (Max, VGS=10V) | 5 m? |
| ゲート・チャージ（Qg) | 140 nC |
| パッケージタイプ | SuperSO8 |
| Mounting Style | Surface Mount |
| Polarity | N-Channel |
| Technology | Superjunction/OptiMOS? 5 |
BSC050N10NS5ATMA1 Key Features
- Ultra-low RDS(オン) of 5 m?, resulting in minimal conduction losses and improved overall system efficiency in power conversion designs.
- High continuous drain current capability (up to 120 A) enables robust performance in demanding load-switching applications.
- 100 V drain-source voltage rating provides ample headroom for use in high-voltage circuits, increasing design flexibility and reliability.
- SuperSO8 surface-mount package supports high-density PCB layouts and facilitates automated assembly processes.
- Incorporates advanced process technology, enhancing switching speed and reducing gate charge for lower drive requirements and improved thermal management.
BSC050N10NS5ATMA1 Advantages vs Typical Alternatives
With its exceptionally low RDS(オン) and high current handling, this MOSFET stands out for applications requiring superior efficiency and thermal performance. The advanced SuperSO8 package and optimized gate charge make it preferable over standard alternatives, supporting higher power density and streamlined integration in compact designs, while maintaining consistent reliability and robust voltage handling.
ベストセラー商品
代表的なアプリケーション
- Synchronous rectification in switched-mode power supplies: The low RDS(オン) and high current rating make it ideal for minimizing losses and enhancing efficiency in SMPS topologies used in industrial and telecom power systems.
- DC-DC converter stages: Well-suited for use as a primary or secondary-side switch in high-current DC-DC converters, ensuring stable operation and improved power conversion.
- Motor drive circuits: Enables precise and efficient control in brushless DC motor controllers and industrial drive modules due to its robust current and voltage ratings.
- Battery management and protection: The device??s low conduction losses and surface-mount form factor support compact, energy-efficient battery protection and power distribution modules.
BSC050N10NS5ATMA1 Brand Info
This device is part of a renowned MOSFET portfolio leveraging advanced OptiMOS? 5 or Superjunction process technology. The product is engineered to deliver high performance in demanding power management applications, with a focus on minimizing conduction and switching losses. Its robust SuperSO8 packaging and proven reliability make it a trusted solution for engineers seeking efficiency and durability in their power electronics designs.
よくあるご質問
What makes this MOSFET suitable for high-efficiency power conversion?
The combination of ultra-low RDS(オン) and high current capacity minimizes conduction losses, ensuring efficient operation even under heavy loads. Its advanced process technology also supports fast switching, reducing energy waste in conversion stages.
注目商品
Is this device appropriate for use in high-voltage circuits?
Yes, with a drain-source voltage rating of 100 V, it is well-suited for applications where higher voltage tolerance is required, such as industrial power supplies and motor drives, providing reliable operation within these environments.
How does the SuperSO8 package benefit PCB design?
The SuperSO8 surface-mount package enables a more compact and efficient PCB layout. It supports automated assembly processes, reduces board space requirements, and improves thermal performance compared to standard packages.
お問い合わせ
Can this MOSFET handle large currents reliably?
With a continuous drain current rating of 120 A, it is engineered for reliable high-current operation. This makes it a strong choice for load switching, motor control, and power distribution applications where current demands are substantial.
What are the key considerations for gate drive in this device?
Its relatively low gate charge means lower drive current is required, which simplifies gate driver design and helps in maintaining fast, efficient switching. This characteristic is particularly beneficial for high-frequency switching applications.
