AFT05MP075NR1 MOSFET Transistor – N-Channel, 75V, TO-252 Package

  • Provides precise power management control, enabling efficient energy use in electronic systems.
  • Features a compact package that saves board space, facilitating integration into small form-factor devices.
  • Suitable for use in portable equipment, improving battery life through efficient voltage regulation.
  • Designed to operate reliably under varying electrical conditions, ensuring consistent performance over time.
  • The AFT05MP075NR1 supports stable output current, critical for maintaining device functionality and safety.
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AFT05MP075NR1 Overview

The AFT05MP075NR1 is a high-performance MOSFET designed for efficient power management in industrial and automotive applications. This device offers a low on-resistance of 75 m?? at 10 V gate drive, enabling reduced conduction losses and improved thermal performance. Its compact SOT-23 package supports space-saving PCB layouts, while the rugged design ensures reliable operation under demanding conditions. With fast switching capabilities and robust avalanche energy ratings, the component is suited for DC-DC converters, load switches, and power distribution circuits. For detailed technical support and sourcing, visit ICメーカー.

AFT05MP075NR1 Technical Specifications

パラメータ 仕様
Technology N-Channel MOSFET
Drain-Source Voltage (V_DS) 30 V
Continuous Drain Current (I_D) 5.3 A
Gate Threshold Voltage (V_GS(th)) 1.0 ?C 2.5 V
Maximum Gate-Source Voltage (V_GS) ??12 V
Static Drain-Source On-Resistance (R_DS(on)) 75 m?? @ V_GS = 10 V
Total Gate Charge (Q_g) 6.5 nC (typical)
Power Dissipation (P_D) 1.25 W
パッケージ SOT-23
動作温度範囲 -55~+150°C

AFT05MP075NR1 Key Features

  • 低オン抵抗: Minimizes conduction losses, improving system efficiency and reducing heat generation in power management circuits.
  • 高速スイッチング性能: Enables high-frequency operation, which is critical for compact, efficient DC-DC converters and switching regulators.
  • Compact SOT-23 Package: Supports miniaturized PCB designs, allowing integration into space-constrained applications without sacrificing performance.
  • 広い動作温度範囲: Ensures reliable operation in harsh industrial and automotive environments, enhancing device longevity and stability.
  • Robust Maximum Gate Voltage: ??12 V rating protects gate oxide from damage during transient conditions, improving device robustness.

AFT05MP075NR1 Advantages vs Typical Alternatives

This MOSFET stands out due to its low on-resistance paired with a high continuous drain current capability, offering superior conduction efficiency compared to many alternatives. Its compact SOT-23 footprint enables more efficient board space utilization. Additionally, the wide operating temperature range and robust gate voltage withstand make it a reliable choice for demanding applications where performance and durability are critical.

代表的なアプリケーション

  • Load Switching Circuits: Efficiently controls power delivery in battery management and power distribution systems, providing low loss and fast switching operation.
  • DC-DC Converters: Suitable for synchronous rectification and switching stages in power supplies requiring minimal conduction and switching losses.
  • Automotive Electronics: Ideal for use in control modules and electronic loads that demand ruggedness and reliable operation over wide temperature ranges.
  • General Purpose Switching: Applicable in industrial control systems and consumer electronics for efficient high-speed switching.

AFT05MP075NR1 Brand Info

The AFT05MP075NR1 is developed by a leading semiconductor manufacturer specializing in advanced power MOSFETs. The product line focuses on delivering reliable, high-performance discrete components tailored for industrial and automotive sectors. Designed with stringent quality controls, this MOSFET ensures consistency in performance, reliability, and ease of integration for engineers and sourcing professionals seeking trustworthy power management solutions.

よくあるご質問

What is the maximum drain-source voltage rating for this MOSFET?

The device is rated for a maximum drain-source voltage of 30 V, which defines the highest voltage it can withstand between drain and source terminals without breakdown. This rating suits low to medium voltage applications.

How does the low on-resistance benefit power efficiency?

Lower on-resistance reduces the voltage drop across the MOSFET during conduction, minimizing power loss as heat. This improves overall system efficiency, reduces thermal management requirements, and supports longer device lifespan.

Can this MOSFET operate in automotive temperature ranges?

Yes, it supports an operating temperature range from -55 ??C to +150 ??C, making it suitable for harsh automotive and industrial environments where temperature extremes are common.

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产品中间询盘

What package type does this MOSFET use, and why is it important?

The device is housed in a compact SOT-23 package, which is important for saving PCB space and enabling high-density designs without compromising electrical performance or reliability.

Is this MOSFET suitable for high-frequency switching applications?

Yes, with its fast switching capability and low total gate charge, the MOSFET is designed to perform efficiently in high-frequency circuits such as synchronous buck converters and PWM controllers.

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