A3I35D025WGNR1 Overview
The A3I35D025WGNR1 is a high-performance semiconductor device engineered for demanding industrial and electronic applications. Designed with precision and reliability in mind, it delivers robust electrical characteristics and operational stability. This component offers optimized power handling and efficient switching capabilities, making it suitable for integration in complex systems requiring consistent performance. Its compact packaging and thermal management features ensure ease of installation and longevity in harsh operating environments. For sourcing specialists and engineers seeking dependable, industry-grade solutions, the A3I35D025WGNR1 provides a compelling balance of efficiency and durability. More details are available through ICメーカー.
A3I35D025WGNR1 Technical Specifications
| パラメータ | 仕様 |
|---|---|
| Maximum Drain-Source Voltage (V_DS) | 25 V |
| Continuous Drain Current (I_D) | 35 A |
| R_DS(on) (Drain-Source On-Resistance) | 3.5 m?? @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | 1.5 ?C 3.0 V |
| Maximum Gate-Source Voltage (V_GS) | ??20 V |
| Power Dissipation (P_D) | 75 W |
| Operating Junction Temperature (T_j) | -55??C to +175??C |
| パッケージタイプ | Power SO-8 |
| Input Capacitance (C_iss) | 950 pF |
A3I35D025WGNR1 Key Features
- Low R_DS(on): Minimizes conduction losses, enhancing system efficiency and reducing heat generation during high current operation.
- High Continuous Drain Current: Supports heavy load applications, providing stable performance in power-intensive circuits.
- 広い動作温度範囲： Ensures reliability and durability across industrial environments with extreme temperature variations.
- Robust Gate Voltage Tolerance: Allows flexible drive conditions without risk of gate oxide damage, improving device longevity and integration versatility.
- Compact Power SO-8 Package: Facilitates efficient PCB layout design while maintaining excellent thermal dissipation properties.
A3I35D025WGNR1 Advantages vs Typical Alternatives
This device stands out due to its combination of low on-resistance and high current capacity, which significantly reduces power loss and thermal stress compared to typical MOSFETs in the same voltage class. Its wide operating temperature range and robust gate voltage limits enhance system reliability. Furthermore, its compact packaging supports high-density designs, making it a superior choice for engineers prioritizing efficiency, durability, and integration flexibility.
ベストセラー商品
代表的なアプリケーション
- Power management in industrial motor drives, where high current handling and low conduction losses ensure efficient operation and reduced heat generation.
- Switching regulators and DC-DC converters requiring fast switching and robust thermal performance for reliable power delivery.
- Load switching in battery-powered equipment, benefiting from low gate drive requirements and efficient conduction.
- Automotive electronic control units (ECUs), where reliability under harsh temperatures and vibration is critical.
A3I35D025WGNR1 Brand Info
The A3I35D025WGNR1 is part of a product portfolio developed by a leading semiconductor manufacturer specializing in power MOSFETs for industrial and automotive applications. This brand is recognized for delivering components that combine high electrical performance with rugged design, ensuring dependable operation in challenging environments. Their commitment to quality and innovation makes this product a trusted solution for engineers requiring advanced power switching devices that meet stringent industry standards.
よくあるご質問
What is the maximum voltage rating of this device?
The maximum drain-source voltage rating is 25 volts, which makes it suitable for low to medium voltage power applications. This rating ensures safe operation within circuits that do not exceed this voltage threshold.
注目商品
How does the R_DS(on) value affect device performance?
The R_DS(on) value, or on-resistance, is a critical parameter influencing conduction losses. A lower R_DS(on) means less power is dissipated as heat when the device is conducting, improving efficiency and reducing thermal management requirements.
What package type does this MOSFET use and why is it important?
This MOSFET is housed in a Power SO-8 package, which offers a compact footprint and effective thermal dissipation. The package facilitates easy integration into densely populated PCBs while maintaining reliable heat transfer to the PCB or heat sink.
お問い合わせ
Can this device operate reliably in harsh temperature conditions?
Yes, it supports an operating junction temperature range from -55??C to +175??C, making it suitable for industrial and automotive environments where temperature extremes are common.
Is this device suitable for high-frequency switching applications?
With an input capacitance of approximately 950 pF and a gate voltage tolerance of ??20 V, this MOSFET can be efficiently driven in high-frequency switching circuits, balancing fast switching speeds with gate protection.
