2N5322-Transistor Overview
The 2N5322 is a PNP bipolar junction transistor (BJT) designed for medium-power switching and amplification applications. Known for its robust electrical characteristics, it operates efficiently in both low and high-frequency circuits. This transistor features a maximum collector current rating suitable for a variety of industrial and consumer electronics, making it an adaptable choice for engineers needing reliable performance under diverse conditions. Its packaging and thermal limits support integration into compact designs while maintaining stable operation. For sourcing and detailed component options, visit ICメーカー.
2N5322-Transistor Technical Specifications
| パラメータ | 価値 | 単位 |
|---|---|---|
| コレクタ・エミッタ間電圧 (V)CEO（最高経営責任者) | -40 | V |
| コレクタ・ベース電圧 (V)中銀) | -60 | V |
| エミッタ・ベース電圧 (V)EBO) | -5 | V |
| コレクタ電流 (IC) | -1 | A |
| Base Current (IB) | -0.2 | A |
| 許容損失（PD) | 0.8 | W |
| 直流電流利得（hFE) | 60 to 300 | (Typ. range) |
| 遷移周波数 (fT) | 50 | MHz |
| 動作温度範囲 | -65 から +150 | ??C |
2N5322-Transistor Key Features
- High voltage tolerance: Supports collector-emitter voltage up to -40 V, enabling use in demanding power switching circuits.
- Wide current handling capability: Collector current rating of -1 A meets needs for moderate power amplification and switching applications.
- Reliable DC gain range: A typical hFE from 60 to 300 ensures predictable amplification performance across different operating points.
- High-frequency operation: Transition frequency of 50 MHz allows effective use in signal amplification for RF and intermediate frequency stages.
- Thermally robust design: Power dissipation up to 0.8 W and extended temperature range (-65 to +150 ??C) support stable function in harsh industrial environments.
代表的なアプリケーション
- Medium-power audio amplifiers where linear signal amplification and voltage gain are required without excessive heat dissipation.
- Switching circuits in industrial automation systems, utilizing the transistor’s ability to handle moderate current loads at elevated voltages.
- Signal processing stages in communication devices, leveraging the device??s high transition frequency for effective amplification of RF signals.
- General-purpose transistor replacement in legacy and new designs requiring a PNP transistor with reliable gain and voltage ratings.
2N5322-Transistor Advantages vs Typical Alternatives
This transistor offers a strong combination of voltage tolerance and current capacity compared to many standard PNP BJTs. Its broad DC current gain range enhances design flexibility, while the 50 MHz transition frequency supports high-speed switching better than typical low-frequency alternatives. The extended operating temperature range and power dissipation ratings contribute to improved reliability and integration into industrial systems where thermal and electrical stresses are common.
ベストセラー商品
2N5322-Transistor Brand Info
The 2N5322 transistor is a widely recognized discrete component manufactured by multiple semiconductor suppliers following JEDEC standards. It is part of a family of PNP transistors commonly produced by companies such as ON Semiconductor, Fairchild (now part of ON Semiconductor), and other global IC manufacturers. These manufacturers ensure the transistor meets stringent quality and performance criteria, making it suitable for industrial, automotive, and consumer electronics markets
