2N3506-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package – ON Semiconductor

  • This transistor amplifies electrical signals, enabling control of current flow in various circuits.
  • Its specified voltage and current ratings ensure safe operation under normal electronic load conditions.
  • The compact package type offers board-space savings, suitable for dense electronic assemblies.
  • Ideal for use in switching applications, it efficiently manages power delivery in control circuits.
  • Manufactured to meet quality standards, it provides consistent performance and long-term reliability.
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2N3506-Transistor Overview

The 2N3506 is a high-voltage PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It offers robust performance with a collector-emitter voltage rating up to 60V and a collector current capacity of 1A, making it suitable for moderate power circuits. This transistor is known for its reliable gain characteristics and ease of integration into a variety of industrial control and signal processing systems. Engineers and sourcing specialists rely on its consistent electrical properties for designing efficient analog circuits. For more detailed product information, visit ICメーカー.

2N3506-Transistor Technical Specifications

パラメータ 価値 単位
コレクタ・エミッタ間電圧 (V)CEO(最高経営責任者) 60 V
コレクタ・ベース電圧 (V)中銀) 100 V
エミッタ・ベース電圧 (V)EBO) 5 V
コレクタ電流 (IC) 1 A
許容損失(Pトット) 30 W
直流電流利得(hFE) 40 to 160 (typical range)
遷移周波数 (fT) 25 MHz
パッケージタイプ TO-39 ?C

2N3506-Transistor Key Features

  • High voltage tolerance: Handles up to 60V collector-emitter voltage, enabling use in medium-power amplifier circuits.
  • Moderate collector current: Supports continuous collector current up to 1A, suitable for switching and linear applications.
  • Wide current gain range: DC current gain between 40 and 160 ensures flexibility across various amplification needs.
  • Reliable power dissipation: With 30W maximum power rating, it sustains stable operation under moderate thermal conditions.
  • Standard TO-39 metal can package: Provides excellent thermal conductivity and mechanical durability for industrial environments.

代表的なアプリケーション

  • General-purpose linear amplification in audio, instrumentation, and control circuits requiring moderate voltage and current handling.
  • Switching applications in industrial electronics, including relay drivers and power control units.
  • Signal processing stages where reliable gain and voltage ratings are necessary for consistent performance.
  • Complementary transistor pairs in amplifier output stages and driver circuits in analog and digital systems.

2N3506-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance and current capacity that is ideal for mid-power amplification and switching tasks. Compared to lower voltage transistors, it provides greater operational headroom, enhancing reliability and reducing distortion. Its broad current gain range improves circuit design flexibility, while the TO-39 package ensures superior heat dissipation versus plastic-encapsulated alternatives. These factors contribute to its preferred use in industrial-grade electronics where durability and consistent performance matter.

2N3506-Transistor Brand Info

The 2N3506 is a classic transistor model originally introduced by various semiconductor manufacturers, including Fairchild Semiconductor, ON Semiconductor, and Texas Instruments. These brands maintain production standards ensuring the transistor meets established electrical and mechanical specifications. The device is widely available through authorized distributors, reflecting its enduring relevance in industrial and commercial electronics. Its proven reliability and well-documented characteristics make it a trusted component for engineers worldwide.

よくあるご質問

What is the maximum collector-emitter voltage rating of this transistor?

The maximum collector-emitter voltage (VCEO(最高経営責任者) is rated at 60 volts. This rating defines the highest voltage the transistor can safely withstand between collector and emitter without breakdown, making

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