2N2219AP-Transistor-PIND NPN Amplifier Transistor – 2N2219AP Package by [Brand]

2N2219AP-Transistor-PIND Overview

The 2N2219AP-Transistor-PIND is a reliable NPN bipolar junction transistor designed for medium power amplification and switching applications. It offers robust current handling and voltage capabilities, making it suitable for a wide range of industrial and consumer electronics. This transistor features a PIND (Plastic Inductive) package which provides enhanced mechanical protection and thermal dissipation. With its versatility and dependable electrical performance, it is widely used in signal amplification, driver stages, and general-purpose switching circuits. For detailed sourcing and technical support, visit ICメーカー.

2N2219AP-Transistor-PIND Key Features

• High current gain: Ensures efficient amplification with minimal distortion, improving signal integrity in your circuit designs.
• Medium power handling capability: Supports collector currents up to 800mA, enabling control of moderately high loads without compromising reliability.
• Robust voltage rating: Withstands collector-emitter voltages up to 40V, offering flexibility in diverse operating environments.
• Durable PIND packaging: Provides enhanced mechanical strength and thermal management to improve device longevity in industrial applications.

2N2219AP-Transistor-PIND Technical Specifications

パラメータ	仕様
トランジスタ・タイプ	NPN Bipolar Junction
コレクタ・エミッタ間電圧 (V)CEO（最高経営責任者)	40 V
コレクタ電流 (IC)	800 mA
許容損失（Pトット)	0.8 W
利得帯域幅積 (fT)	250 MHz
直流電流利得（hFE)	40 to 300 (depending on operating point)
パッケージタイプ	PIND (Plastic Inductive)
動作温度範囲	-55℃～+150℃の範囲

2N2219AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current capacity and voltage tolerance compared to typical low-power transistors. Its PIND packaging enhances thermal management and mechanical robustness, increasing reliability under harsh industrial conditions. The device??s high gain bandwidth product supports faster switching and amplification, making it a preferred choice over standard general-purpose transistors when stability and performance are critical.

代表的なアプリケーション

• Signal amplification stages in audio and instrumentation circuits, where low distortion and stable gain are required for precise signal processing.
• Switching applications controlling moderate loads such as relays, motors, or lamps in industrial control systems.
• Driver circuits for higher power transistors or MOSFETs, enabling efficient stage interfacing and power management.
• General-purpose amplification and switching in consumer electronics, including communication devices and power regulators.

2N2219AP-Transistor-PIND Brand Info

The 2N2219AP-Transistor-PIND is offered by reputable semiconductor manufacturers specializing in high-quality bipolar transistors for industrial and commercial electronics. Known for their stringent quality control and adherence to industry standards, these manufacturers ensure the transistor delivers consistent electrical parameters and mechanical robustness. The PIND packaging reflects a design focus on durability and ease of integration in automated assembly lines, supporting long-term reliability in demanding environments.

よくあるご質問

What is the maximum collector current for the 2N2219AP transistor?

The maximum continuous collector current rating is 800 mA. This allows the device to handle moderate power loads safely when used within specified operating conditions, making it suitable for driver and switching applications.

Can this transistor be used in high-frequency circuits?

Yes, the transistor??s gain bandwidth product of approximately 250 MHz supports applications requiring moderate high-frequency operation, such as RF amplification and fast switching circuits.

What package type does the 2N2219AP transistor use, and why is it important?

This device uses a PIND (Plastic Inductive) package, which provides enhanced mechanical strength and improved thermal dissipation compared to standard plastic packages. This is critical for maintaining performance and reliability in industrial environments.

What temperature range is suitable for the 2N2219AP transistor?

The operating temperature range spans from -55??C to +150??C, enabling use in a broad range of environmental conditions from cold storage to elevated temperature industrial settings without performance degradation.

How does the 2N2219AP compare to similar general-purpose transistors?

Compared to typical general-purpose transistors, this device offers higher current capacity and voltage tolerance, along with a robust package design. This combination provides better performance, reliability, and suitability for demanding industrial applications.