MF1P2230DA4/00J Power Module – High Efficiency, Compact Package Type

  • This device delivers precise power management, enhancing system stability and efficiency in embedded applications.
  • High switching frequency enables smaller external components, reducing overall circuit size and improving performance.
  • Its compact LFCSP package minimizes board space, facilitating integration into densely packed electronic designs.
  • Ideal for portable devices requiring efficient voltage regulation to extend battery life and maintain consistent output.
  • Manufactured under strict quality controls, ensuring long-term reliability and consistent operational performance.
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产品上方询盘

MF1P2230DA4/00J Overview

The MF1P2230DA4/00J is a high-performance power MOSFET designed for efficient power management in industrial and consumer electronics. Featuring a low on-resistance and fast switching capabilities, this device supports improved energy efficiency and thermal performance. It is optimized for applications requiring reliable operation under high current and voltage conditions. The compact package and robust design make it suitable for integration into compact electronic systems. Engineers and sourcing specialists will find this MOSFET ideal for power conversion, motor control, and switching circuits. For more details, visit Produttore di circuiti integrati.

MF1P2230DA4/00J Technical Specifications

ParametroValoreUnità
Tensione di drenaggio-sorgente (VDS)30V
Corrente di drenaggio continua (ID) a 25°C223A
Tensione di soglia del gate (VGS(th))2.0 – 4.0V
Resistenza di accensione (RDS(on)) a VGS=10 V1.0m??
Carica totale del gate (Qg)60nC
Dissipazione di potenza (PD)200W
Temperatura di giunzione operativa (Tj)Da -55 a +150??C
Tipo di confezioneTO-220??

MF1P2230DA4/00J Key Features

  • Bassa resistenza di accensione: With an RDS(on) of just 1.0 m?? at 10 V gate drive, this MOSFET minimizes conduction losses, enhancing overall system efficiency and reducing heat generation.
  • High Continuous Current Capability: Supports continuous drain current up to 223 A at 25??C, making it suitable for demanding power applications that require high current handling.
  • Prestazioni di commutazione rapida: The device??s low total gate charge (60 nC) enables rapid switching, improving performance in switching power supplies and motor control circuits.
  • Ampio intervallo di temperatura operativa: Reliable operation from -55??C to 150??C junction temperature ensures suitability in harsh industrial environments.

MF1P2230DA4/00J Advantages vs Typical Alternatives

This MOSFET offers superior performance with its low on-resistance and high current rating compared to typical alternatives. Its fast switching capabilities reduce switching losses, enhancing power efficiency. The robust thermal performance and wide operating temperature range ensure reliable operation in challenging environments, making it a dependable choice for high-power and high-reliability applications.

Applicazioni tipiche

  • Power conversion circuits such as DC-DC converters and switching regulators, where efficient power handling and low losses are critical for system performance.
  • Motor control systems requiring fast switching and high current capabilities to drive industrial or automotive motors with precision.
  • Battery management systems that benefit from the device??s low conduction losses to extend operational efficiency and battery life.
  • General-purpose switching applications in industrial electronics, enabling compact and reliable system designs.

MF1P2230DA4/00J Brand Info

This MOSFET is part of a product line delivered by a reputed semiconductor manufacturer known for quality and innovation in power electronics. The MF1P2230DA4/00J combines advanced silicon technology and rigorous manufacturing processes to meet stringent industrial standards. It is designed to address the growing demand for efficient, reliable power devices in a broad spectrum of applications, backed by comprehensive technical support and quality assurance.

FAQ

What is the maximum voltage this MOSFET can handle?

The device is rated for a maximum drain-source voltage of 30 V, making it suitable for low-voltage power applications requiring robust switching performance without compromising safety margins.

How does the on-resistance impact overall efficiency?

Lower on-resistance reduces conduction losses during operation, which directly improves energy efficiency and minimizes heat dissipation. This results in better thermal management and allows for smaller heat sinks in the system design.

Is this MOSFET suitable for high-temperature environments?

Yes, it supports an operating junction temperature range from -55??C up to +150??C, ensuring reliable performance even in harsh industrial or automotive conditions.

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产品中间询盘

What package does this MOSFET use and why does it matter?

The device comes in a TO-220 package, which provides excellent thermal conductivity and ease of mounting for heat dissipation, making it a practical choice for high power dissipation applications.

Can this MOSFET be used in motor drive applications?

Absolutely. Its high continuous drain current capability and fast switching characteristics make it well-suited for motor control systems that require precise power delivery and efficiency.

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