IPB048N15N5ATMA1 N-Channel MOSFET, 150V 80A, TO-220 Package, Infineon

  • Designed for efficient switching and power management in electronic circuits, benefiting users with reduced energy loss.
  • Low on-resistance minimizes heat generation, supporting higher current handling in compact designs.
  • Standard package ensures a space-saving layout, allowing for denser board configurations in modern devices.
  • Well-suited for motor control circuits, where fast switching improves response time and operational efficiency.
  • Manufactured for consistent performance, helping maintain system reliability over prolonged usage cycles.
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IPB048N15N5ATMA1 Overview

The IPB048N15N5ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial power management and switching applications. With robust voltage handling and low RDS(on), this device delivers efficiency and reliability in power conversion systems, motor drives, and switching regulators. Its advanced silicon technology ensures minimal conduction losses, making it ideal for high-current environments where thermal management and efficiency are paramount. Designed for integration into modern electronic systems, the IPB048N15N5ATMA1 supports streamlined assembly and long-term operational stability. For more details, visit Produttore di circuiti integrati.

IPB048N15N5ATMA1 Technical Specifications

Parametro Valore
Tipo di transistor N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V
Corrente di drenaggio continua (ID) 48 A
RDS(on) (Max) 15.2 m??
Gate Charge (Qg) 77 nC
Tipo di confezione TO-263-3
Mounting Style SMD/SMT
Intervallo di temperatura operativa -55??C to +175??C

IPB048N15N5ATMA1 Key Features

  • Low RDS(on) ensures reduced conduction losses, enabling higher energy efficiency in switching applications.
  • High voltage rating of 150 V allows safe operation in industrial and automotive power circuits where voltage transients are common.
  • High continuous drain current capability (up to 48 A) supports demanding loads and robust power delivery without performance degradation.
  • Thermal stability across a wide temperature range increases device reliability in harsh operating environments.
  • Compact TO-263-3 package is optimized for surface-mount assembly and efficient heat dissipation.
  • Suitable for automated pick-and-place processes, streamlining production and reducing assembly costs.

IPB048N15N5ATMA1 Advantages vs Typical Alternatives

Compared to standard N-channel MOSFETs, the IPB048N15N5ATMA1 offers significantly lower RDS(on) and higher current handling, resulting in improved efficiency and reduced heat generation. Its high voltage rating and robust package contribute to greater reliability and flexibility for a broad range of industrial and automotive applications, reducing the risk of system failure under demanding conditions.

Applicazioni tipiche

  • Switching power supplies: The device??s low RDS(on) and high current rating make it ideal for use in high-efficiency DC-DC converters and power supply circuits, ensuring minimal energy loss and reliable performance under continuous operation.
  • Motor control: Suitable for industrial motor drivers, where high current capacity and voltage withstand capabilities are essential for precise speed and torque control.
  • Load switching: Well-suited for high-side or low-side switching in industrial automation and process control, thanks to its thermal stability and robust performance.
  • Battery management systems: The device??s efficiency and reliability support safe and effective charging and discharging cycles in energy storage and backup power applications.

IPB048N15N5ATMA1 Brand Info

This MOSFET is part of a recognized family of power semiconductors, engineered to address the needs of industrial, automotive, and high-reliability markets. The IPB048N15N5ATMA1 exemplifies a commitment to innovation in switching efficiency, power density, and thermal management. Its design reflects the brand??s focus on quality, durability, and application versatility, making it a preferred choice for engineers seeking dependable performance in critical power electronics.

FAQ

What are the main benefits of using this MOSFET in power management applications?

This device provides low RDS(on) and high current handling, which translates to lower power losses and heat generation. These benefits help improve overall system efficiency and reliability, especially in high-current or high-frequency switching environments.

Can the device be used in both automotive and industrial applications?

Yes, its voltage and current ratings, along with a wide operating temperature range, make it suitable for both industrial automation systems and automotive power circuits that demand high reliability and ruggedness.

What package type is available and how does it support efficient assembly?

It is offered in a TO-263-3 surface-mount package, which supports automated SMT assembly and efficient heat dissipation, facilitating streamlined manufacturing and compact PCB layouts.

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How does this MOSFET contribute to thermal management in high-power designs?

The combination of low RDS(on) and a thermally efficient package helps maintain lower junction temperatures during operation, reducing the need for external cooling and extending device lifespan in power-dense environments.

What types of circuits or systems benefit most from integrating this MOSFET?

Switching regulators, motor control units, battery management systems, and industrial automation circuits benefit significantly due to the device??s efficiency, current capability, and robust thermal and electrical performance.

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