HMC427ALP3ETR Overview
The HMC427ALP3ETR is a high-performance, low-noise, MMIC (Monolithic Microwave Integrated Circuit) GaAs pHEMT low noise amplifier designed for broadband frequency ranges from DC to 6 GHz. This device offers excellent gain, noise figure, and linearity, making it ideal for sensitive signal amplification in complex RF and microwave systems. The robust design ensures reliable operation with stable performance across temperature and voltage variations. Its compact, leadless surface-mount package supports easy integration into space-constrained industrial and defense applications. For detailed sourcing and technical support, visit Produttore di circuiti integrati.
HMC427ALP3ETR Technical Specifications
Parametro | Specifiche |
---|---|
Gamma di frequenza | DC to 6 GHz |
Gain | 15 dB (typical) |
Noise Figure | 1.8 dB (typical at 2 GHz) |
Input Return Loss | 14 dB (typical) |
Output Return Loss | 12 dB (typical) |
Output P1dB (1 dB Compression Point) | +17 dBm |
Tensione di alimentazione | +5 V |
Consumo di corrente | 65 mA (typical) |
Pacchetto | Leadless SMT, 3×3 mm |
HMC427ALP3ETR Key Features
- Broadband Operation: Covers DC to 6 GHz, enabling versatile use in multiple RF and microwave systems without the need for multiple amplifiers.
- Low Noise Figure: Typical 1.8 dB noise figure improves system sensitivity and signal integrity in weak signal environments.
- High Gain Performance: 15 dB typical gain ensures effective signal amplification with minimal distortion, enhancing overall system dynamic range.
- Compact Surface-Mount Package: The 3×3 mm leadless SMT package supports high-density PCB layouts and automated assembly processes.
- Basso consumo di corrente: Operates at 65 mA typical current, reducing power requirements in battery-powered or energy-conscious applications.
- Excellent Linearity: +17 dBm output P1dB enables robust handling of high input signal levels without significant compression.
HMC427ALP3ETR Advantages vs Typical Alternatives
This device delivers superior low noise performance and broadband gain compared to typical low noise amplifiers, improving receiver sensitivity and signal clarity. Its low current consumption and compact footprint offer integration advantages in size- and power-constrained industrial and defense systems. The robust linearity enhances signal fidelity under varying input power conditions, providing reliable and consistent amplification across the full DC to 6 GHz frequency range.
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Applicazioni tipiche
- Wideband RF and microwave receiver front-ends requiring low noise amplification and high linearity to improve sensitivity and dynamic range in communication systems.
- Test and measurement equipment where low noise and broadband gain are essential for accurate signal analysis and characterization.
- Military and aerospace RF subsystems demanding compact, reliable amplifiers with stable performance over temperature and voltage variations.
- Industrial sensing and instrumentation systems that require low noise, broadband amplification for precise signal conditioning and processing.
HMC427ALP3ETR Brand Info
The HMC427ALP3ETR is part of a comprehensive portfolio of high-performance MMIC amplifiers from a leading semiconductor manufacturer specializing in GaAs pHEMT technology. Designed for demanding RF and microwave markets, this product combines advanced semiconductor processes with meticulous design to deliver precise amplification solutions. Its brand is recognized for reliability, consistency, and technical support tailored to industrial, defense, and commercial sectors.
FAQ
What frequency range does the amplifier cover?
The amplifier operates over a broad frequency range from DC to 6 GHz, making it suitable for a variety of RF and microwave applications including communication, instrumentation, and radar systems.
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What is the typical noise figure of this device?
The typical noise figure is 1.8 dB at 2 GHz, which ensures low signal degradation and high receiver sensitivity in weak signal environments.