Transistor a doppio diodo DDTC122LU-7-F, commutazione ad alta velocità, pacchetto SOT-23

DDTC122LU-7-F Overview

The DDTC122LU-7-F is a dual NPN transistor device designed for high-speed switching and amplification in industrial electronic circuits. Featuring low saturation voltage and high gain characteristics, it delivers reliable performance in compact SOT-363 packaging. Its robust electrical ratings and fast switching capabilities make it suitable for signal processing, amplification, and digital logic applications. Available through Produttore di circuiti integrati, this transistor array supports efficient circuit design with enhanced thermal and electrical performance, ideal for engineers and sourcing specialists seeking dependable semiconductor components.

DDTC122LU-7-F Technical Specifications

Parametro	Specifiche
Tipo	Transistor NPN doppio
Tensione collettore-emettitore (VCEO)	40 V
Tensione collettore-base (VCBO)	60 V
Tensione base emettitore (VEBO)	5 V
Corrente di collettore (IC)	100 mA
Dissipazione di potenza (Ptot)	300 mW
Current Gain (hFE) at IC=2mA	100 (min)
Frequenza di transizione (fT)	100 MHz (tipico)
Pacchetto	SOT-363 (6-Leads)

DDTC122LU-7-F Key Features

• Dual transistor configuration: Enables compact circuit design by integrating two NPN transistors in a single SOT-363 package, saving PCB space and reducing component count.
• High current gain: Provides efficient amplification with a minimum hFE of 100, ensuring stronger signal output with minimal input drive.
• Velocità di commutazione rapida: Transition frequency up to 100 MHz supports high-speed switching applications, optimizing performance in digital and analog circuits.
• Bassa tensione di saturazione: Minimizes power loss during operation, improving overall circuit efficiency and thermal management.

DDTC122LU-7-F Advantages vs Typical Alternatives

This transistor device offers superior current gain and higher transition frequency compared to typical discrete transistors, enhancing amplification accuracy and switching speed. Its compact dual transistor package simplifies board layout and reduces thermal resistance, delivering improved reliability and power efficiency in demanding industrial applications.

Applicazioni tipiche

• Signal amplification in low-power electronic circuits, where dual transistor functionality reduces component count and footprint, improving overall system integration.
• Switching elements in digital logic circuits, leveraging fast transition frequency to handle high-speed data processing tasks effectively.
• Driver stages for LED indicators and small relays, taking advantage of low saturation voltage to reduce power dissipation.
• General-purpose amplification and switching in consumer and industrial electronic devices requiring reliable and compact transistor solutions.

DDTC122LU-7-F Brand Info

The DDTC122LU-7-F is produced by a leading semiconductor manufacturer known for delivering high-quality transistor arrays tailored for industrial and consumer electronics. This product line emphasizes precision engineering, robust electrical performance, and compliance with standard packaging formats to facilitate seamless integration into varied circuit designs.

FAQ

What is the maximum collector current rating for this device?

The maximum collector current rating is 100 mA, ensuring the device can handle moderate signal amplification and switching loads typical in low-power electronic applications without compromising reliability.

Can this transistor array be used in high-frequency switching applications?

Yes, with a transition frequency of approximately 100 MHz, it is well-suited for high-speed switching and signal processing tasks in digital and analog circuits requiring fast response times.

What package type does this device come in, and why is it beneficial?

It is packaged in a SOT-363 6-lead surface-mount package, offering a compact footprint that helps reduce PCB space while providing adequate thermal dissipation for stable operation.

Is this dual transistor suitable for low voltage applications?

Yes, with emitter-base voltage rated at 5 V and collector-em