CY7C1019CV33-8VC 1M x 9 SRAM Memory IC – 44-Pin TSOP Package

  • This device provides high-speed static RAM functionality, enabling fast and efficient data storage and retrieval.
  • Featuring an access time suitable for timing-critical applications, it ensures system responsiveness and reliable performance.
  • The compact package reduces board space requirements, facilitating integration into dense circuit designs.
  • Ideal for buffering data in embedded systems, it supports smooth operation by minimizing latency in read/write cycles.
  • Manufactured under stringent quality controls, it delivers consistent performance and long-term reliability in various environments.
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CY7C1019CV33-8VC Overview

The CY7C1019CV33-8VC is a high-performance 1K x 8-bit static RAM designed for reliable, low-power memory storage in embedded systems. Operating at 3.3V with an 8ns access time, it delivers fast data access and stable operation suitable for a broad range of industrial and commercial applications. This device features a 32-pin PLCC package, making it ideal for space-constrained designs requiring robust, non-volatile data retention. Manufactured with CMOS technology, it ensures minimal power consumption while maintaining high-speed performance. For more detailed information, visit Produttore di circuiti integrati.

CY7C1019CV33-8VC Technical Specifications

Parametro Specifiche
Memory Organization 1,024 words x 8 bits
Tempo di accesso 8 ns
Tensione di esercizio 3.3 V ?? 0.3 V
Tipo di confezione 32-pin PLCC
Input/Output Type CMOS compatible
Intervallo di temperatura operativa 0??C to +70??C (Commercial)
Power Supply Current (Active) 40 mA (typical)
Standby Current 10 ??A (max)

CY7C1019CV33-8VC Key Features

  • Fast 8 ns access time: Enables quick data retrieval, improving system throughput in time-sensitive applications.
  • Low-voltage operation at 3.3 V: Reduces power consumption, extending battery life in portable and embedded systems.
  • 32-pin PLCC packaging: Provides compact integration suitable for space-constrained printed circuit boards.
  • CMOS technology: Ensures high noise immunity and minimal power dissipation for reliable long-term performance.
  • Low standby current: Minimizes power use during idle periods, enhancing energy efficiency in power-sensitive designs.
  • Ampio intervallo di temperatura operativa: Supports commercial-grade environments, ensuring stable operation across typical industrial conditions.
  • Byte-wide data bus: Facilitates easy interfacing with standard 8-bit microprocessors and controllers.

CY7C1019CV33-8VC Advantages vs Typical Alternatives

This device offers a balance of high-speed access and low power consumption that outperforms many traditional SRAMs operating at higher voltages. Its 3.3 V operation reduces overall system power, while the 8 ns access time ensures rapid data handling. The 32-pin PLCC package supports dense PCB layouts better than bulkier solutions. Additionally, CMOS technology delivers superior noise immunity and lower leakage currents compared to bipolar alternatives, making it a reliable choice for modern embedded applications.

Applicazioni tipiche

  • Embedded system memory buffers requiring fast, low-power static RAM for temporary data storage and rapid access in industrial controllers and communication devices.
  • Cache memory in microprocessor-based designs that benefit from quick read/write cycles and minimal standby current.
  • Data storage in portable instrumentation where low voltage operation and compact packaging are critical.
  • General-purpose memory expansion modules in telecommunications equipment and consumer electronics.

CY7C1019CV33-8VC Brand Info

The CY7C1019CV33-8VC is part of a reputable line of static RAM products known for robust performance and efficient power usage. Designed with precision CMOS technology, it aligns with industry standards for reliable memory solutions in embedded and industrial systems. This product supports various applications by combining fast access times with low operating voltages, reflecting the brand’s commitment to innovation and quality in memory components.

FAQ

What is the primary memory organization of this SRAM?

The device is organized as 1,024 words by 8 bits, providing a total of 8,192 bits of static RAM. This byte-wide configuration simplifies interface with standard 8-bit microprocessors and digital systems.

What voltage levels does this

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