CY62147CV33LL-70BVI Memoria SRAM IC 64Kb a basso consumo, pacchetto SOIC-8

CY62147CV33LL-70BVI Overview

The CY62147CV33LL-70BVI is a high-performance 16Mb (2M x 8) CMOS static RAM designed to deliver fast access times and low power consumption in industrial and commercial applications. Operating at a 3.3V power supply, this SRAM offers a 70 ns access time, making it ideal for systems requiring rapid data retrieval and storage. Its 32-pin TSOP II package optimizes board space while supporting reliable signal integrity. With its low power dissipation and robust architecture, this memory device is well-suited for embedded systems, networking equipment, and other high-speed data processing applications. For further details, visit Produttore di circuiti integrati.

CY62147CV33LL-70BVI Technical Specifications

Parametro	Specifiche
Capacità di memoria	16Mb (2M x 8 bits)
Tempo di accesso	70 ns
Tensione di esercizio	3.3 V ?? 0.3 V
Power Supply Current (Operating)	40 mA (Max)
Power Supply Current (Standby)	100 ??A (Typ)
Tipo di confezione	32-pin TSOP II
Data Retention Voltage	2.0 V (Min)
Intervallo di temperatura operativa	0??C to +70??C

CY62147CV33LL-70BVI Key Features

• Fast 70 ns Access Time: Enables quick data retrieval, improving system throughput in timing-critical applications.
• Low Voltage Operation at 3.3 V: Reduces overall power consumption, enhancing energy efficiency in embedded systems.
• Compact 32-pin TSOP II Package: Saves PCB space and simplifies integration into high-density designs.
• Low Standby Current: Minimizes power draw during idle periods, extending battery life in portable devices.
• Robust Data Retention: Maintains memory content reliably at voltages as low as 2.0 V, ensuring data integrity under varying conditions.
• Ampio intervallo di temperatura operativa: Suitable for standard commercial environments, ensuring consistent performance.

CY62147CV33LL-70BVI Advantages vs Typical Alternatives

This SRAM device offers a combination of fast access speed and low power consumption, which is advantageous compared to many traditional static RAMs operating at higher voltages or slower speeds. Its 3.3 V operation reduces system power requirements, while the compact TSOP II package facilitates easier integration into space-constrained designs. Additionally, the low standby current and stable data retention features enhance reliability and efficiency, making it a superior choice for embedded and industrial memory applications.

Applicazioni tipiche

• Embedded systems requiring fast and reliable memory access for real-time data processing and control.
• Networking equipment where high-speed SRAM supports buffering and temporary storage of data packets.
• Consumer electronics that demand low power consumption for extended battery life and compact form factors.
• Industrial automation systems leveraging robust memory components to maintain performance under typical commercial temperatures.

CY62147CV33LL-70BVI Brand Info

This memory product is developed and manufactured by a leading semiconductor supplier known for delivering high-quality CMOS static RAM components. The CY62147CV33LL-70BVI reflects the brand??s commitment to providing reliable, high-speed memory solutions for diverse industrial and commercial applications. Through stringent quality control and advanced packaging technologies, this device upholds performance standards required by engineers and sourcing specialists across multiple sectors.

FAQ

What is the primary memory organization of this SRAM device?

The device features a memory organization of 2M words by 8 bits, providing a total capacity of 16 megabits. This structure facilitates byte-wide data access, which is suitable for a variety of embedded and system-level applications.

What are the power consumption characteristics during operation and standby?

During active operation, the device typically