2N5660-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling effective control of current in various circuits.
  • It features a voltage rating that ensures stable operation under typical power supply conditions.
  • The compact package design reduces board space, facilitating integration in dense electronic assemblies.
  • Ideal for switching applications, it helps manage power delivery efficiently in consumer and industrial devices.
  • Manufactured to meet standard quality controls, it provides consistent performance and long-term reliability.
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产品上方询盘

2N5660-Transistor Overview

The 2N5660 transistor is a high-performance silicon NPN transistor designed for medium-power amplification and switching applications. Known for its robust collector current capacity and voltage handling, this device is ideal for industrial and commercial electronic circuits requiring reliable performance under moderate power conditions. Its complementary electrical characteristics enable efficient signal amplification and switching in various analog and digital systems. With a TO-18 metal can package, the transistor ensures improved thermal dissipation and durability, making it a trusted choice for engineers and sourcing specialists. For detailed technical data and procurement, visit Produttore di circuiti integrati.

2N5660-Transistor Key Features

  • High Collector Current Capability: Supports up to 1 A collector current, enabling effective power handling in amplification and switching roles.
  • Collector-Emitter Voltage Rating: Rated for 80 V, allowing for operation in circuits with moderately high voltage requirements.
  • Bassa tensione di saturazione: Ensures efficient switching with minimal power dissipation, improving overall circuit performance and energy efficiency.
  • TO-18 Metal Can Package: Provides enhanced thermal management and mechanical durability compared to plastic encapsulated alternatives.

2N5660-Transistor Technical Specifications

ParametroValoreUnità
Tipo di transistorNPN?C
Tensione collettore-emettitore (VAMMINISTRATORE DELEGATO)80V
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)5V
Corrente di collettore (IC)1A
Dissipazione di potenza (Ptot)625mW
Guadagno di corrente CC (hFE)40 to 160?C
Frequenza di transizione (fT)50MHz
Tipo di confezioneTO-18?C

2N5660-Transistor Advantages vs Typical Alternatives

This transistor offers a balance of moderate voltage and current ratings combined with low saturation voltage, providing efficient switching and amplification in industrial circuits. Its metal TO-18 package enhances thermal dissipation compared to plastic alternatives, resulting in improved reliability and longevity. The wide DC gain range allows for flexible design integration, making it a superior choice for engineers seeking dependable performance in medium-power electronic applications.

Applicazioni tipiche

  • Medium-power amplifier stages in audio and signal processing circuits where reliable current handling is required without compromising signal integrity.
  • Switching applications in industrial control systems that necessitate dependable transistor operation under varying loads.
  • Driver stages for relay and solenoid control circuits benefiting from the transistor??s voltage and current ratings.
  • General-purpose transistor use in analog circuits, including buffering and signal amplification, where moderate gain and power dissipation are acceptable.

2N5660-Transistor Brand Info

The 2N5660 transistor is a well-established product in the semiconductor industry, manufactured by reputable suppliers adhering to stringent quality standards. It is recognized for its reliable electrical characteristics and robust metal package construction. This product is commonly stocked by distributors and favored by engineers for its proven performance in medium-power applications. The brand emphasizes consistency, quality assurance, and availability to support industrial electronic design and manufacturing needs.

FAQ

Qual è la corrente massima di collettore di questo transistor?

The device can safely handle a maximum collector current of 1 ampere, making it suitable for medium-power amplification and switching tasks within this current range.

What is the maximum voltage the transistor can withstand?

The maximum collector-emitter voltage rating is 80 volts, while the collector-base voltage reaches up to 100 volts. This allows use in circuits with moderate voltage requirements without risk of breakdown.

What type of package does this transistor come in and why is it beneficial?

It is housed in a TO-18 metal can package, which offers enhanced thermal conductivity and mechanical durability compared to plastic packages. This ensures better heat dissipation and longer operational life.

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产品中间询盘

What is the typical DC current gain (hFE) range for this device?

The transistor exhibits a DC current gain ranging from 40 to 160, providing flexibility for different amplification needs and allowing designers to optimize circuit performance accordingly.

Can this transistor be used in high-frequency applications?

With a transition frequency around 50 MHz, the transistor is suitable for moderate-frequency applications but may not be ideal for very high-frequency RF circuits. It is best applied in audio, switching, and general-purpose signal amplification.

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