2N5237-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling precise control in various circuits.
  • It features a voltage rating suitable for handling moderate power levels, ensuring stable operation under load.
  • The device??s package design offers a compact footprint, facilitating efficient use of board space in tight layouts.
  • Ideal for audio amplification or signal switching, it enhances performance in consumer electronics or control systems.
  • Manufactured with industry-standard processes, it provides consistent quality and long-term reliability in applications.
Logo della tecnologia Microchip
产品上方询盘

2N5237-Transistor Overview

The 2N5237 is a high-voltage NPN bipolar junction transistor designed for medium power amplification and switching applications. It offers a collector-emitter voltage rating suitable for circuits requiring robust voltage handling capabilities, making it ideal for industrial and electronic design projects. With a maximum collector current of 0.6A and a power dissipation capacity of 1 watt, this transistor ensures reliable operation under moderate load conditions. Its silicon construction guarantees stable performance across a wide temperature range. Engineers and sourcing specialists can rely on this component for efficient signal amplification and switching tasks. Available through Produttore di circuiti integrati, it meets standard quality and performance criteria for industrial electronics.

2N5237-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage (Vceo) rating of 100V, it supports circuits requiring elevated voltage handling, enhancing design flexibility.
  • Moderate current handling: The device can manage collector currents up to 0.6A, suitable for medium-power switching and amplification without excessive heat generation.
  • Reliable power dissipation: Rated for 1 watt of power dissipation, it ensures sustained operation under typical industrial conditions while maintaining thermal stability.
  • Stable gain: Featuring a DC current gain (hFE) range of 40 to 100, it delivers consistent amplification performance across specified operating ranges.

2N5237-Transistor Technical Specifications

Parametro Specifiche Unità
Tensione collettore-emettitore (Vceo) 100 V
Tensione collettore-base (Vcbo) 120 V
Tensione emettitore-base (Vebo) 5 V
Corrente di collettore (Ic) 0.6 A
Dissipazione di potenza (Ptot) 1 W
Guadagno di corrente CC (hFE) 40 to 100 (unitless)
Frequenza di transizione (fT) 30 MHz
Intervallo di temperatura operativa Da -65 a +200 ??C

2N5237-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high-voltage capability of 100V collector-emitter rating, offering enhanced voltage handling compared to many low-voltage alternatives. Its moderate current rating and power dissipation make it suitable for medium-power applications without compromising reliability. The stable DC gain range ensures consistent amplification, while its wide operating temperature range supports demanding industrial environments. These attributes combine to provide engineers with a robust, reliable transistor option for switching and amplification tasks where typical low-voltage or lower power devices may fall short.

Applicazioni tipiche

  • Medium power amplifier stages in industrial electronic circuits, where reliable voltage and current handling are critical for performance and longevity.
  • Switching applications requiring moderate current flow and high voltage tolerance, such as relay drivers and power control circuits.
  • Signal processing circuits that benefit from stable current gain over a wide temperature range, ensuring consistent output quality.
  • General-purpose transistor usage in electronic prototyping and repair, enabling flexible design choices for engineers and technicians.

2N5237-Transistor Brand Info

The 2N5237 transistor is a widely recognized silicon NPN transistor commonly offered by multiple semiconductor manufacturers. It is valued for its high-voltage capability and moderate power ratings, making it a staple device in many industrial and commercial electronic designs. This transistor??s proven performance and availability through reputable suppliers provide engineers and sourcing specialists with a dependable component that aligns with standard design specifications. Its enduring presence in the market underlines its reliability and versatility.

FAQ

What is the maximum voltage this transistor can handle?

The maximum collector-emitter voltage rating is 100 volts, which allows the transistor to be used in circuits requiring high voltage tolerance without risk of breakdown under normal operating conditions.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 30 MHz, this transistor is suitable for moderate frequency applications but may not be ideal for very high-frequency RF circuits where higher transition frequencies are required.

What power dissipation should I consider when designing with this device?

The transistor is rated for a maximum power dissipation of 1 watt, so proper heat management and thermal design considerations are necessary to ensure reliable operation within this limit.

📩 Contattaci

产品中间询盘

Is this transistor suitable for switching applications?

Yes, its voltage and current ratings make it well-suited for medium-power switching applications such as relay driving or electronic switching in industrial control systems.

What is the typical gain range for this transistor?

The DC current gain (hFE) typically ranges from 40 to 100, providing sufficient amplification for various analog circuit designs requiring moderate gain stability.

Applicazione

, ,

Risparmiare costi e tempo

Consegna veloce in tutto il mondo

Parti originali garantite

Assistenza post-vendita esperta

Cercate un prezzo migliore?