2N3724UB/TR NPN Transistor by ON Semiconductor – TO-92 Package, High Gain Amplifier

2N3724UB/TR Overview

The 2N3724UB/TR is a robust bipolar junction transistor designed for medium power amplification and switching applications. Engineered with a silicon NPN structure, this transistor delivers reliable performance across a broad range of operating conditions. Its rugged construction and consistent electrical characteristics make it suitable for industrial electronics, signal processing, and general-purpose amplification tasks. The device supports collector currents up to 800 mA and voltage ratings conducive to diverse circuit designs. Available in a standard plastic package, it facilitates easy integration into automated assembly lines. For procurement and detailed datasheets, visit Produttore di circuiti integrati.

2N3724UB/TR Key Features

• Elevata capacità di corrente del collettore: Supports continuous collector currents up to 800 mA, enabling efficient power handling in switching and amplification circuits.
• Moderate Collector-Emitter Voltage: With a maximum collector-emitter voltage of 30 V, it suits applications requiring mid-range voltage tolerance.
• Consistent Gain Performance: Offers a DC current gain (hFE) range ideal for linear amplifier designs, ensuring signal fidelity and stability.
• Thermal Stability: Designed for stable operation with a maximum junction temperature of 150??C, enhancing reliability under varying thermal loads.

2N3724UB/TR Technical Specifications

Parametro	Specifiche	Unità
Tipo di transistor	Transistor a giunzione bipolare NPN	?C
Tensione collettore-emettitore (VCEO)	30	V
Corrente di collettore (IC)	800	mA
Guadagno di corrente CC (hFE)	50 to 300	?C
Dissipazione di potenza (Ptot)	1.2	W
Frequenza di transizione (fT)	100	MHz
Temperatura di giunzione (Tj)	150	??C
Tipo di confezione	TO-92 Plastic	?C

2N3724UB/TR Advantages vs Typical Alternatives

This transistor stands out with its balanced combination of moderate voltage handling and high collector current capability, providing flexibility across multiple industrial applications. Its wide DC current gain range ensures precise amplification, while the thermal stability and power dissipation ratings offer robust reliability. Compared to similar devices, it integrates easily into compact circuits with its TO-92 packaging, facilitating cost-effective manufacturing without compromising performance.

Applicazioni tipiche

• General-purpose amplification in audio and signal processing circuits, where stable gain and moderate power handling are essential for consistent performance.
• Switching applications in low to medium power electronic control systems, benefiting from its reliable collector current capacity.
• Driver stages for relays and small motors, leveraging the transistor??s ability to handle transient loads effectively.
• Industrial automation and sensor interface circuits requiring dependable switching and amplification under varied environmental conditions.

2N3724UB/TR Brand Info

The 2N3724UB/TR is a product line offered by a reputable semiconductor manufacturer specializing in high-quality discrete components. This transistor is engineered to meet stringent industrial standards for performance and reliability. Packaged in a standard TO-92 plastic case, it is designed for ease of use in automated production environments. The device supports a broad range of applications, reflecting the brand??s commitment to delivering versatile and durable semiconductor solutions for engineers and sourcing specialists worldwide.

FAQ

What are the maximum voltage and current ratings for this transistor?

This device supports a maximum collector-emitter voltage of 30 V and a continuous collector current up to 800 mA, making it suitable for medium power applications in various electronic circuits.

How does the DC current gain (hFE) affect circuit design with this transistor?

The DC current gain ranges from 50 to 300, allowing designers to predict the amplification level and ensure stable operation in linear amplifier configurations or switching circuits requiring precise current control.

Is this transistor suitable for high-frequency applications?

With a transition frequency of approximately 100 MHz, it can be used in moderate frequency amplification and switching tasks but may not be optimal for very high-frequency RF applications.

Quale tipo di pacchetto viene utilizzato per questo transistor e perché è importante?

The transistor is housed in a TO-92 plastic package, which is compact, cost-effective, and compatible with automated assembly processes. This packaging also facilitates heat dissipation suitable for its power rating.

Can this transistor handle high temperatures during operation?

Yes, the junction temperature rating of up to 150??C ensures reliable performance under elevated thermal conditions commonly encountered in industrial environments, enhancing long-term durability.