VN10KN3-G Voltage Regulator Module ?C Compact PCB Mount Package

VN10KN3-G Overview

The VN10KN3-G is a high-performance insulated gate bipolar transistor (IGBT) designed for industrial power switching applications. Optimized for efficiency and reliability, this device supports high voltage operation with low switching losses, making it ideal for demanding environments. Its robust construction ensures enhanced thermal stability and durability, suitable for complex power conversion systems. Sourced from Fabricant de circuits intégrés, the VN10KN3-G provides engineers and sourcing specialists with a reliable semiconductor solution engineered to meet stringent industrial requirements with consistent quality and performance.

VN10KN3-G Technical Specifications

Paramètres	Spécifications
Tension collecteur-émetteur (VCES)	1000 V
Courant de collecteur (IC)	10 A (continuous)
Gate-Emitter Voltage (VGE)	??20 V (max)
Dissipation de puissance (PD)	150 W (max)
Junction Temperature (TJ)	De -55°C à +150°C
Threshold Voltage (VGE(th))	4.0 V (typical)
Turn-On Delay Time (td(on))	90 ns (typical)
Paquet	TO-220F

VN10KN3-G Key Features

• High voltage blocking capability: Supports up to 1000 V, enabling use in medium-voltage power conversion applications with excellent safety margins.
• Low switching losses: Optimized gate structure reduces turn-on and turn-off delays, enhancing efficiency in switching power supplies and motor drives.
• Robust thermal performance: Rated for junction temperatures up to 150??C, allowing reliable operation in harsh industrial environments without performance degradation.
• Wide gate voltage tolerance: Handles ??20 V gate-emitter voltage, providing flexibility in driving circuitry design and improving device control robustness.

VN10KN3-G Advantages vs Typical Alternatives

This IGBT offers superior voltage and current handling combined with reduced switching losses compared to standard transistors. Its robust thermal tolerance ensures higher reliability under continuous operation, and the wide gate voltage range simplifies integration with diverse driver ICs. These advantages make it a preferred choice for applications requiring high efficiency and long-term stability in industrial power electronics.

Applications typiques

• Industrial motor control systems where high efficiency and fast switching improve performance and reduce energy consumption over extended operational cycles.
• Switch-mode power supplies requiring reliable high-voltage switching with minimal power dissipation to enhance overall system efficiency.
• Renewable energy converters, such as solar inverters, to manage power conversion with improved thermal stability and switching precision.
• Uninterruptible power supplies (UPS) that demand durable semiconductor devices capable of handling frequent switching under varying load conditions.

VN10KN3-G Brand Info

The VN10KN3-G is part of a semiconductor product line developed by a recognized manufacturer specializing in power devices for industrial applications. Known for rigorous quality control and adherence to international standards, this product reflects the brand??s commitment to delivering components that combine performance, durability, and ease of integration. It supports engineers and procurement teams in sourcing reliable IGBTs that meet the demanding requirements of modern power electronics systems.

FAQ

What is the maximum collector-emitter voltage rating of this device?

The maximum collector-emitter voltage rating is 1000 V, which allows the device to be used safely in medium-voltage power control circuits without risk of breakdown under normal operating conditions.

How does the VN10KN3-G perform in terms of switching speed?

This transistor features a typical turn-on delay time of 90 nanoseconds, enabling fast switching cycles that contribute to higher efficiency and reduced power losses in switching power supplies and motor drive applications.

What temperature range can this IGBT operate within?

The device is designed to operate reliably across a junction temperature range from -55??C up to +150??C, ensuring stable performance even in harsh industrial environments with fluctuating temperatures.

What packaging does the VN10KN3-G use, and how does that affect its application?

It comes in a TO-220F package, which provides efficient heat dissipation and easy mounting options. This packaging supports effective thermal management critical for high-power applications and simplifies integration into existing circuit designs.

Is the gate voltage range flexible for driver circuit design?

Yes, with a maximum gate-emitter voltage of ??20 V, the device offers flexibility in driver circuit design, allowing compatibility with a broad range of gate driver ICs and enhancing control precision in various applications.