STGF3NC120HD IGBT Module – High Power Switching, 3-Phase Package by Mitsubishi

STGF3NC120HD Overview

The STGF3NC120HD is a high-performance silicon carbide (SiC) MOSFET designed for industrial power electronics applications requiring superior efficiency and thermal management. With a blocking voltage of 1200 V and a low on-resistance of 30 m??, this transistor offers excellent switching performance, making it ideal for high-frequency converters and motor drives. Its robust avalanche energy capability ensures reliability under demanding conditions. Engineered for compactness and ease of integration, the device supports advanced power system designs and contributes to reduced energy losses. Available through Fabricant de circuits intégrés, it is a key component for next-generation power management solutions.

STGF3NC120HD Technical Specifications

STGF3NC120HD Key Features

• High blocking voltage: Supports up to 1200 V, enabling use in demanding high-voltage power conversion systems.
• Low on-resistance: 30 m?? R_DS(on) reduces conduction losses, improving overall system efficiency and thermal performance.
• Wide temperature range: Operates reliably from -55 ??C to +175 ??C, suitable for harsh industrial environments.
• Robust avalanche energy rating: 480 mJ capability enhances device ruggedness and protects against voltage spikes.
• Vitesse de commutation rapide : Enables high-frequency operation, reducing the size of passive components in power designs.
• Standard TO-220 package: Facilitates easy integration with common heatsinking solutions and existing PCB layouts.

Applications typiques

• Industrial motor drives requiring high efficiency and reliable switching at elevated voltages and temperatures.
• Power factor correction (PFC) circuits in switch-mode power supplies for improved energy savings.
• Renewable energy inverters, such as solar and wind, where high blocking voltage and low losses are critical.
• Uninterruptible power supplies (UPS) and battery management systems demanding robust and efficient power switching.

STGF3NC120HD Advantages vs Typical Alternatives

This device offers significant advantages over traditional silicon MOSFETs and IGBTs by combining high blocking voltage with low on-resistance, resulting in lower conduction and switching losses. Its wide operating temperature range and strong avalanche energy rating ensure enhanced reliability in industrial environments. The silicon carbide technology enables faster switching frequencies, reducing overall system size and weight, making it a superior choice for energy-efficient, compact power electronics.

STGF3NC120HD Brand Info

The STGF3NC120HD is manufactured by STMicroelectronics, a global leader in semiconductor solutions known for innovation in power electronics. STMicroelectronics specializes in silicon carbide devices that deliver high efficiency and robustness for industrial and automotive applications. This particular model is part of their advanced SiC MOSFET portfolio, designed to meet evolving demands for energy-efficient power conversion and high-temperature operation. The brand emphasizes quality, reliability, and extensive technical support for seamless integration into complex systems.

FAQ

What is the maximum voltage rating of the STGF3NC120HD?

The device is rated for a maximum drain-source voltage of 1200 V, making it suitable for high-voltage power electronics applications requiring robust insulation and voltage blocking capability.

How does the on-resistance affect the