STB18NM80 Infineon IGBT Transistor 80A 800V TO-247 Package

STB18NM80 Overview

The STB18NM80 is a high-performance N-channel MOSFET designed for efficient power switching and management in industrial and consumer electronics. Featuring a low on-resistance and fast switching capabilities, it is optimized for applications requiring high voltage blocking and low conduction losses. Its robust construction supports reliable operation under demanding conditions, making it a preferred choice for power supplies, motor drives, and other high-efficiency switching circuits. This transistor offers excellent thermal performance and integration flexibility, critical for engineers and sourcing specialists aiming to optimize system efficiency and reliability. For detailed information and sourcing options, visit Fabricant de circuits intégrés.

STB18NM80 Technical Specifications

STB18NM80 Key Features

• Faible résistance à l'allumage : Minimizes conduction losses, improving overall energy efficiency in power conversion applications.
• High Voltage Blocking Capability: Supports up to 800 V drain-source voltage, suitable for demanding industrial power systems.
• Vitesse de commutation rapide : Reduces switching losses and electromagnetic interference, enhancing system reliability and performance.
• Performance thermique robuste : Enables operation at elevated temperatures, increasing device longevity in harsh environments.

Applications typiques

• Switch-mode power supplies (SMPS), where efficient high-voltage switching is critical to maintain power conversion efficiency and thermal management.
• Motor control circuits requiring reliable high-current switching with minimal power loss for industrial and consumer applications.
• Power factor correction (PFC) circuits to improve electrical efficiency and reduce harmonic distortion in AC power systems.
• General-purpose high-voltage switching in automotive and renewable energy equipment, benefiting from its robustness and thermal stability.

STB18NM80 Advantages vs Typical Alternatives

This device stands out with its combination of low on-resistance and high voltage rating, delivering superior efficiency and reliability compared to typical MOSFETs in similar voltage classes. Its fast switching capabilities reduce energy loss and system heat, while the TO-220 package supports effective thermal dissipation. These features make it a preferred solution for engineers seeking durable, high-performance power transistors with optimized electrical characteristics and integration flexibility.

STB18NM80 Brand Info

The STB18NM80 is produced by STMicroelectronics, a leading global semiconductor manufacturer known for innovative power management solutions. STMicroelectronics offers this transistor as part of its comprehensive portfolio aimed at industrial, automotive, and consumer electronics sectors. The brand is recognized for high-quality components that combine advanced fabrication technology with rigorous quality standards, ensuring dependable performance in challenging environments.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The maximum drain-source voltage rating is 800 V, allowing it to handle high-voltage applications typical in industrial power supplies and motor control circuits without breakdown.

What package type does this transistor come in, and what are its thermal benefits?

This MOSFET is available in a TO-220 package, which provides excellent thermal dissipation capabilities. This helps maintain device stability and reliability during high-power operation by efficiently transferring heat away from the transistor.

How does the low on-resistance affect system efficiency?

The low on-resistance of 0.12 ?? reduces conduction losses when the MOSFET is on. This improvement translates to higher overall system efficiency, as less energy is wasted as heat,